OCTOBER1997 Search Results

WL102

Abstract: WL600C WL800
Contextual Info: WL800 2.5GHz Frequency Synthesiser Preliminary Information DS4583 1.6 October1997 The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Mitel Semiconductor HG process and operates from a supply voltage of 2.7 - 3.6V. It is designed

Contextual Info: M ITEL _ S E M IC O N D U C T O R WL800 2.5GHz Frequency Synthesiser _ •■ ■ . x Prelim inary Inform ation DS4583 1.6 October1997 The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Mitel Semiconductor HG process

hp 1458

Abstract: nc 1458 C227 LTC1458CG LTC1458CSW LTC1458IG LTC1458ISW LTC1458LCG LTC1458LCSW LTC1458LIG
Contextual Info: SPECIFICATION NOTICE LTC1458/LTC1458L October1997 The following versions of the LTC 1458/LTC1458L are now available in the industrial temperature range – 40°C to 85°C as indicated in Bold. All specifications remain unchanged. For complete specifications, typical performance curves and applications information, please see

LT1212

Abstract: SN1211
Contextual Info: SPECIFICATION NOTICE LT1211/LT1212 October1997 The following Electrical Characteristics note has changed on the LT 1211/LT1212 data sheet. Replace Note 5 with the new Note shown below. All other notes remain unchanged. For complete specifications, typical performance curves and applications information, please see the

LTC1142

Contextual Info: SPECIFICATION NOTICE LTC1142 October1997 The following specification has changed on the LTC 1142 data sheet as indicated in bold. All other specifications remain unchanged. For complete specifications, typical performance curves and applications information, please see the LTC1142 data sheet.

D2Pak Package dimensions

Abstract: STB7NB40 STB7NB40T4
Contextual Info: STB7NB40 N-CHANNEL 400V - 0.75 Ω - 7.0A D2PAK PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STB7NB40 400 V < 0.9 Ω 7.0 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.75 Ω 3 ■ EXTREMELY HIGH dv/dt CAPABILITY

S46440

Contextual Info: TMS464409, TMS464409P, TMS465409, TMS465409P 16 777 216 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES _ SMKS895A - MAY 1997 - REVISED OCTOBER 1997 Organization . . . 16777216 by 4 Bits □GC PACKAGE TOP VIEW vcc[ Performance Ranges:

Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS826B - SEPTEMBER 1996 - REVISED OCTOBER 1987 * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • f • • Organization 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture

ct20j

Abstract: 0x00009f
Contextual Info: Instruments T p Y A S TMS320C8Q Digital Signal Processor 1997 Digitai Signai Processing Solutions TMS320C80 DIGITAL SIGNAL PROCESSOR SPRSQ23B - JULY 1 9 9 4 - R E V IS E D O CTO BER 1997 Single-Chip Parallel Multiple Instruction/Multiple Data MIMD DSP More Than Two Billion RISC-Equivalent

LV19

Abstract: TMS626812
Contextual Info: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES S M O S691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGEPACKAGE TO P VIEW *CK3 (C L t = 3) tCK2 (C L=2) V cc [ 1 44 ] V s s ve c [

D2Pak Package dimensions

Abstract: B7NB40 smps Schematic Diagram STB7NB40 STB7NB40T4
Contextual Info: STB7NB40 N-CHANNEL 400V - 0.75 Ω - 7.0A D2PAK PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STB7NB40 400 V < 0.9 Ω 7.0 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.75 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY

smj55161

Contextual Info: SMJ55161 262144 BY 16-SIT MULTIPORT VIDEO RAM SGMS056D - MAY 1995 - REVISED OCTOBER 1997 _ • Organization: - DRAM: 262144 by 16 Bits - SAM: 256 by 16 Bits • Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and

p10nb20

Abstract: p10nb20f p10nb20fp p10nb p10nb2 620 diode STP10NB20 STP10NB20FP P10n
Contextual Info: STP10NB20 STP10NB20FP N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6A FEATURES SUMMARY • TYPICAL RDS(on) = 0.25 Ω

p10nb20

Abstract: p10nb20f p10nb
Contextual Info: STP10NB20 STP10NB20FP N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP10NB20 200 V < 0.40 Ω 10 A STP10NB20FP 200 V < 0.40 Ω 6A FEATURES SUMMARY • TYPICAL RDS(on) = 0.25 Ω