P2H10M440L Search Results

Contextual Info: MOSFET 70A 450~500 V PD10M441L PD10M440L P2H10M441L P2H10M440L •回路図 CIRCUIT PD P2H Rg Rg G2 S2 MOS 1 D2S1 2 3 D1 S2 G2 S2 MOS S2 D1 D2 S1 MOS MOS S1 G1 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PD10M441L440L

Contextual Info: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

Contextual Info: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

P2H10M440L

Abstract: P2H10M441L PD10M440L PD10M441L
Contextual Info: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧

Contextual Info: MOSFET 70A 450~500 V PD10M441L PD10M440L P2H10M441L P2H10M440L •回路図 CIRCUIT PD P2H Rg Rg G2 S2 MOS 1 D2S1 2 3 D1 S2 G2 S2 MOS S2 D1 D2 S1 MOS MOS S1 G1 S1 G1 Rg Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PD10M441L440L

induction heating Circuit

Contextual Info: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

Contextual Info: MOSFET MODULE P2H10M441L / P2H10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

diode s40a

Contextual Info: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage

Contextual Info: MOSFET 70A 450～ 450～500V PD10M441L/440L PD10M441L PD10M440L P2H10M441L P2H10M440L P2H10M441L/440L 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧

NE32184A

Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
Contextual Info: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B

P2H10M440L

Abstract: 440L PD10M440L PD10M441L
Contextual Info: MOSFET MODULE PD10M441L / PD10M440L Dual 70A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ