P4N60ED Search Results
P4N60ED Price and Stock
Rochester Electronics LLC MGP4N60EDIGBT, 6A, 600V, N-CHANNEL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MGP4N60ED | Bulk | 3,631 | 560 |
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onsemi MGP4N60EDInsulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MGP4N60ED | 3,631 | 1 |
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P4N60ED Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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P4N60Contextual Info: MOTOROLA O rder this docum ent by M G P4N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet P4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 4.0 A @ 90°C |
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P4N60ED/D MGP4N60ED P4N60 | |
P4N60Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M G P4N60ED Insulated Gate Bipolar Transistor w ith Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 4.0 A @ 90“C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE |
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MGP4N60ED P4N60 |