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    PA181 Search Results

    PA181 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA1814GR-9JG-E1-A Renesas Electronics Corporation Pch Single Power Mosfet -30V -7.0A 16Mohm Tssop8 Visit Renesas Electronics Corporation
    UPA1812GR-9JG-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA1811GR-9JG-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA1812GR-9JG-E2-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA1817GR-9JG-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
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    PA181 Price and Stock

    Tempo Communications Inc PA1819-1

    CUTTER CABLE CIRCULAR CROSSING
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    DigiKey PA1819-1 Bulk 1
    • 1 $278.26
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    Honeywell Sensing and Control 6PA181-LS

    ENCLOSED BASIC - SPARE PART
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    DigiKey 6PA181-LS Bulk 10
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    • 10 $60.496
    • 100 $60.496
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    Mouser Electronics 6PA181-LS
    • 1 $75.2
    • 10 $60.49
    • 100 $60.49
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    • 10000 $60.49
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    Newark 6PA181-LS Bulk 10
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    • 10 $87.44
    • 100 $71.42
    • 1000 $71.42
    • 10000 $71.42
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    Master Electronics 6PA181-LS
    • 1 $78.93
    • 10 $68.33
    • 100 $53.29
    • 1000 $52.49
    • 10000 $52.49
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    Cornell Dubilier Electronics Inc SPA181M02B

    CAP ALUM POLY 180UF 20% 2V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA181M02B Bulk 200
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    • 1000 $0.98815
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    Cornell Dubilier Electronics Inc SPA181M02R

    CAP ALUM POLY 180UF 20% 2V SMD
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    DigiKey SPA181M02R Reel
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    Cornell Dubilier Electronics Inc SPA181M06R

    CAP ALUM POLY 180UF 20% 6.3V SMD
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    DigiKey SPA181M06R Reel
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    Find more PA181 price and stock on Findchips.com

    PA181 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PA1810 NEC MOS Field Effect Transistor Original PDF
    PA1811 NEC MOS Field Effect Transistor Original PDF
    PA1812 NEC MOS Field Effect Transistor Original PDF
    PA1813 NEC MOS Field Effect Transistor Original PDF
    PA1815 NEC MOS Field Effect Transistor Original PDF
    PA18-1580-010SA Spectrum Controls Patch Antenna Element Original PDF

    PA181 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA1813

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and


    Original     		PDF PA1813 PA1813

    upa1817

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1817 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1817 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and


    Original     		PDF PA1817 PA1817 upa1817

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA1819 is a switching device that can be driven directly by a 4.0 V power source. This device features a low on-state resistance and


    Original     		PDF PA1819 PA1819

    D1380

    Abstract: Nec 658
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and


    Original     		PDF PA1814 PA1814 D1380 Nec 658

    d1296

    Abstract: PA1812 a5269
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1812 is a switching device which can be driven directly by a 4.0-V power source. The µPA1812 features a low on-state resistance and


    Original     		PDF PA1812 PA1812 d1296 a5269

    PA1810

    Abstract: 4360M
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1810 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1810 is a switching device which can be driven directly by a 2.5 V power source. The µPA1810 features a low on-state resistance and


    Original     		PDF PA1810 PA1810 4360M

    PA1815

    Abstract: UPA1815GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and


    Original     		PDF PA1815 PA1815 UPA1815GR

    PA1816

    Abstract: g1625
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and


    Original     		PDF PA1816 PA1816 g1625

    d1296

    Abstract: PA1812
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1812 is a switching device which can be driven directly by a 4.0-V power source. The µPA1812 features a low on-state resistance and


    Original     		PDF PA1812 PA1812 d1296

    PA1813

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and


    Original     		PDF PA1813 PA1813

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and


    Original     		PDF PA1814 PA1814

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1818 P チャネル MOS FET スイッチング用 外形図（単位: mm） µ PA1818 は，2.5 V 電源系による直接駆動が可能なスイッチ ング素子です。


    Original     		PDF PA1818 PA1818 PA1818GR-9JG G16254JJ1V0DS

    g1625

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1818 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1818 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and


    Original     		PDF PA1818 PA1818 g1625

    PA1816

    Abstract: g1625
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1816 P チャネル MOS FET スイッチング用 µPA1816 は，1.8 V 電源系による直接駆動が可能なス 外形図（単位：mm） イッチング素子です。


    Original     		PDF PA1816 PA1816 PA1816GR-9JG G16252JJ1V0DS g1625

    D1182

    Abstract: PA1811
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1811 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1811 is a switching device which can be driven directly by a 2.5-V power source. The µPA1811 features a low on-state resistance and


    Original     		PDF PA1811 PA1811 D1182

    D1380

    Abstract: PA1815 UPA1815GR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and


    Original     		PDF PA1815 PA1815 D1380 UPA1815GR

    UPA1815GR

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5 V power source. The µPA1815 features a low on-state resistance and


    Original     		PDF PA1815 PA1815 UPA1815GR

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1819 P チャネル MOS FET スイッチング用 外形図（単位: mm） µ PA1819 は，4.0 V 電源系による直接駆動が可能なスイッチ ング素子です。


    Original     		PDF PA1819 PA1819 PA1819GR-9JG G16267JJ1V0DS

    PA1819

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    PACKARD 58 JC3

    Abstract: PACKARD 58 vch 6A14VT JC201 14VT packard 56 SERIES current rating
    Text: V-Series Switch Product Highlights: Maximum sealing protection with dual seals around lamps and rocker stem certified to IP66 & IP68. Optional panel seals for additional protection. ŠŠ Silver plated butt contact mechanism provides 50 to 100 thousand electrical cycles and a variety of different


    Original     		PDF

    PA1813

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Qbh-133

    Abstract: QBH-104 PA381 QBH198 qbh-109 amplifonix PA710 qbh-110 QBH109 PA630
    Text: PHOENIX-M/A-COM Amplifier Direct Replacement List PHOENIX- AMPLIFONIX M/A-COM MODEL# MODEL# PA002 PA005 PA010 PAO15 PA030 PA050 PA055 PA056 PAIO PA100 PAI 10 PAI 12 PA 120 PA 150 PA 162 PA 170 PA 180 PA181 PA 190 PA191 PA211 PA219 TM7302 TM6505 TM6511 TM9717


    OCR Scan     		PDF PA002 PA005 PA010 PAO15 PA030 PA050 PA055 PA056 PA100 PA181 Qbh-133 QBH-104 PA381 QBH198 qbh-109 amplifonix PA710 qbh-110 QBH109 PA630

    PA1812

    Abstract: uPA1812 UPA1812GR-9JG N354
    Text: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor jjl PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The//PA1812 is a switching device which can be driven directly by a 4V power source. The PA1812 features a low on-state resistance and excellent


    OCR Scan     		PDF uPA1812 The//uPA1812 uuPA1812 PA1812 UPA1812GR-9JG N354

    IF33

    Abstract: No abstract text available
    Text: ~PHO£m< PA181 Series 10-1000 MHz. Cascadable Amplifier M/C/?OmMECap. Typical Performance Curves - -55°C +25°C - A - +85° C See Short Form Chart and Mechanical Section for available outline drawings. Features: typical values • ■ ■ ■ Wide Bandw idth. 10-1000 MHz.


    OCR Scan     		PDF PA181 IF33