PD54003L Search Results

PD54003L

Abstract: DB-54003L-235
Contextual Info: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■

W316

Abstract: Diode W316
Contextual Info: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1

smd c8f

Abstract: A1 AMP RF SOT89 smd code c9f SMD CODE vapc C2f SOT-89 murata filter 104 "RF Power Amplifier" Coilcraft GRM1885C1H2R2CZ01 GRM1885C1H3R9CZ01
Contextual Info: STEVAL-TDR001V1 2 stage RF power amp: PD84001 + PD54003L-E + LPF N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.2 V ■ Output power: 4 W ■ Current < 1.6 A ■ Input power < 10 dBm

DB-54003L-175

Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
Contextual Info: DB-54003L-175 RF power amplifier using 1x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.5 V ■ Output power: > 5 W ■ Efficiency: 64% - 73% ■ Load mismatch: 20:1

DB-55008L-880

Abstract: PD54003L
Contextual Info: DB-55008L-880 schematic 1+ MSub R3 D1 C12 B2 C13 2- + C14 B1 Vcc FR4 H=60 mil R2 C10 C11 L1 R1 C5 C6 TL4 C2 RFin TL1 C1 C3 TL2 TL3 C4 LDMOS PD54003L C7 TL5 C8 TL6 C9 TL7 RFout

DB-54003L-175

Abstract: PD54003L
Contextual Info: DB-54003L-175 schematic 1+ 2- R2 B2 MSub C3 C4 + B1 FR4 H=60 mil C5 Vcc C1 C2 D1 R1 L2 L1 C9 TL4 C8 RFin TL1 C6 TL2 L3 TL3 LDMOS PD54003L C10 TL5 L4 C11 TL6 C7 TL7 RFout

BZX284C5V1

Abstract: DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L
Contextual Info: DB-54003L-175A RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175 MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%

Diode W316

Abstract: 102J DB-54003L-512 EXCELDRC35C GRM42-6 PD54003L TL11 W-309 W309 FR460
Contextual Info: DB-54003L-512 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 380 - 512 MHz ■ Supply voltage: 7.5 V ■ Output power: 5 W ■ Efficiency: 54 % - 63 % ■ Load mismatch: 20:1

JESD97

Abstract: J-STD-020B PD54003L-E STMICROELECTRONICS MSL PACKAGES st 54003 TRANSISTOR AO SMD MARKING
Contextual Info: PD54003L-E RF Power Transistors The LdmoST Plastic FAMILY Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 3W WITH 20 dB GAIN @ 500MHz ■ NEW RF PLASTIC PACKAGE ■ EDS PROTECTION ■ SUPPLIED IN TAPE & REEL OF 3K UNITS

panasonic inductor date code

Abstract: PD54003L C17AH DB-54003L-175A EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 panasonic capacitor date codes panasonic inductor date code NH
Contextual Info: DB-54003L-175A RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 155 - 175 MHz SUPPLY VOLTAGE

st 54003

Abstract: TRANSISTOR AO SMD MARKING J-STD-020B PD54003L-E
Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

j655

Abstract: 151j CAPACITOR grm42-6 cog 101 DB-54003L-235 EEVHB1V100P EXCELDRC35C GRM42-6 PD54003L 102J 100B390JW
Contextual Info: DB-54003L-235 RF power amplifier using 1 x PD54003L N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235MHz ■ Supply voltage: 7.2V ■ Output power: 5W ■ Power gain: 13 ± 0.5dB ■

Contextual Info: PD54003L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT =3 W mith 20dB gain@500 MHz ■ New leadless plastic package ■ ESD protection

PD54003L

Contextual Info: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%

DB-54003L-880

Abstract: PD54003L
Contextual Info: DB-54003L-880 schematic 1+ MSub R3 D1 C12 B2 C13 2- + C14 B1 Vcc FR4 H=60 mil R2 C10 C11 L1 R1 C5 C6 TL4 C2 RFin TL1 C1 C3 TL2 TL3 C4 LDMOS PD54003L C7 TL5 C8 TL6 C9 TL7 RFout

COG 100

Abstract: 104k x7r 50 capacitor 104k x7r 50 39 capacitor GRM42-6 COG 104K capacitor 104k 104k x7r 100 47 uf capacitor GRM42-6
Contextual Info: DB-54003L-235 BOM Component ID Description Manufacturer Part Code B1 B2 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9, C10 C11 D1 L1 L2 L3 R1 R2 R3 R4 TL1 TL2 TL3 TL4 TL5 TL6 TL7 PD54003L Board Ferrite Bead Value Case size PANASONIC EXCELDRC35C Ferrite Bead PANASONIC EXCELDRC35C

zener diode 5.1 v

Abstract: 3214W-1-103E DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE 8r2 diode diode h60
Contextual Info: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE 7.5 V OUTPUT POWER 2.5 W POWER GAIN

DB-54003L-470

Abstract: JESD97 PD54003L-E PD54003L
Contextual Info: DB-54003L-470 RF POWER amplifier using 1 x PD54003L-E N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.5V ■ Output power: 5W ■ Efficiency: 57% - 61% ■ Load mismatch: 20:1

J-STD-020B

Abstract: PD54003L st 54003
Contextual Info: PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 20 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

3214W-1-103E

Abstract: DB-54003L-880 EEVHB1V100P EXCELDRC35C GRM42-6C0G102J50 PD54003L gP DIODE zener diode 5.1 v panasonic capacitor date codes
Contextual Info: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE

100B Zener

Contextual Info: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE

LDMOS

Abstract: diode c12 diode C2 C4 diode transistor C3 diode r4 C3 diode CIRCUIT C1 diode PD54003L
Contextual Info: DB-54003L-235 Test circuit Test circuit schematic 1+ MSub R1 D1 FR4 H=60 mil C3 B2 C4 2- + C5 B1 Vcc R2 C2 C1 C10 L1 R3 L3 R4 L2 TL4 LDMOS PD54003L RFin TL1 C6 TL2 C7 TL3 C8 TL5 C9 TL6 C11 C12 TL7 RFout

Contextual Info: PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O

Contextual Info: PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 20 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION