PDIP28
Abstract: U631H16 ZMD AG
Text: U631H16 SoftStore 2K x 8 nvSRAM Features ! High-performance CMOS nonvola! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable
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U631H16
PDIP28
D-01109
D-01101
PDIP28
U631H16
ZMD AG
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PDIP28
Abstract: U630H16
Text: U630H16 HardStore 2K x 8 nvSRAM F Packages: PDIP28 300 mil Features F High-performance CMOS nonvolatile static RAM 2048 x 8 bits F 25, 35 and 45 ns Access Times F 12, 20 and 25 ns Output Enable Access Times F Hardware STORE Initiation (STORE Cycle Time < 10 ms)
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U630H16
PDIP28
M3015
D-01109
D-01101
PDIP28
U630H16
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PDIP28
Abstract: U635H64
Text: U635H64 PowerStore 8K x 8 nvSRAM F Packages: PDIP28 300 mil Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM 8192 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle
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U635H64
PDIP28
D-01109
D-01101
PDIP28
U635H64
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PDIP28
Abstract: 191-2N
Text: ZMD-Standard November 2001 Package PDIP28 600 mil MDS 713 Supersedes Edition 11.95 Dimensions in millimetres Based on IEC 191-2N: Type 051G06 E A1 Seating Plane L A 1 Dimensions e b1 0,254 M Z c 28 ° e1 1 D Pin 1 Index area Dimensions of Sub-Group B1 Dimensions of Sub-Group C1
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PDIP28
191-2N:
051G06
QS-000713-HD-03
PDIP28
191-2N
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Untitled
Abstract: No abstract text available
Text: U631H16 SoftStore 2K x 8 nvSRAM Features F High-performance CMOS nonvolaF F F F F F F F F F F F F F F F Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable
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U631H16
PDIP28
M3015
D-01109
D-01101
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PDIP28
Abstract: U630H64
Text: U630H64 HardStore 8K x 8 nvSRAM F Features ESD characterization according MIL STD 883C M3015.7-HBM classification see IC Code Numbers Packages: PDIP28 (300 mil) SOP28 (330 mil) F High-performance CMOS nonvolatile static RAM 8192 x 8 bits F 25, 35 and 45 ns Access Times F
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U630H64
M3015
PDIP28
U630H64
D-01109
D-01101
PDIP28
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U631H16
Abstract: No abstract text available
Text: U631H16 SoftStore 2K x 8 nvSRAM Features F High-performance CMOS nonvolaF F F F F F F F F F F F F F F F Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable
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U631H16
PDIP28
M3015
60tee
D-01109
D-01101
U631H16
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Untitled
Abstract: No abstract text available
Text: U631H16 SoftStore 2K x 8 nvSRAM Features ! High-performance CMOS nonvola! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable
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U631H16
PDIP28
M3015
D-01109
D-01101
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Untitled
Abstract: No abstract text available
Text: U631H16 SoftStore 2K x 8 nvSRAM Features F High-performance CMOS nonvolaF F F F F F F F F F F F F F F F Packages: PDIP28 300 mil PDIP28 (600 mil) SOP28 (300 mil) SOP24 (300 mil) tile static RAM 2048 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable
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U631H16
PDIP28
M3015
D-01109
D-01101
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C28K
Abstract: JEP95 SOP28 package sop28 PDIP28 MIKRO
Text: ZMD-Standard November 2001 Package PDIP28 600 mil MDS 713 Supersedes Edition 11.95 Dimensions in millimetres Based on IEC 191-2N: Type 051G06 E A1 Seating Plane L A 1 Dimensions e b1 0,254 M Z c 28 ° e1 1 D Pin 1 Index area Dimensions of Sub-Group B1 Dimensions of Sub-Group C1
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PDIP28
191-2N:
051G06
QS-000765-HD-01
C28K
JEP95
SOP28 package
sop28
PDIP28
MIKRO
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PDIP28
Abstract: U631H64
Text: U631H64 SoftStore 8K x 8 nvSRAM F Packages: PDIP28 300 mil Features F High-performance CMOS nonvolatile static RAM 8192 x 8 bits F 25, 35 and 45 ns Access Times F 12, 20 and 25 ns Output Enable Access Times F Software STORE Initiation (STORE Cycle Time < 10 ms)
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U631H64
PDIP28
M3015
D-01109
D-01101
PDIP28
U631H64
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PDIP28 PACKAGE
Abstract: chippac M28256 PDIP28 QREE0032
Text: QREE0032 QUALIFICATION REPORT PDIP28 ChipPAC Assembly Plant Transfer Using the M28256 THIS REPORT This Qualification Report summarizes the reliability trials and results performed to qualify the transfer of the assembly plant of our subcontractor ChipPAC from Korea to China for PDIP28 package Plastic Dual
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QREE0032
PDIP28
M28256
PDIP28
M28256
32Kx8
PDIP28 PACKAGE
chippac
QREE0032
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PDIP28
Abstract: U631H64 Mikroelektronik
Text: U631H64 SoftStore 8K x 8 nvSRAM F Packages: PDIP28 300 mil Features F High-performance CMOS nonvolatile static RAM 8192 x 8 bits F 25, 35 and 45 ns Access Times F 12, 20 and 25 ns Output Enable Access Times F Software STORE Initiation (STORE Cycle Time < 10 ms)
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U631H64
PDIP28
M3015
D-01109
D-01101
PDIP28
U631H64
Mikroelektronik
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PDIP28
Abstract: U630H64
Text: U630H64 HardStore 8K x 8 nvSRAM F Features ESD characterization according MIL STD 883C M3015.7-HBM classification see IC Code Numbers Packages: PDIP28 (300 mil) SOP28 (330 mil) F High-performance CMOS nonvolatile static RAM 8192 x 8 bits F 25, 35 and 45 ns Access Times F
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U630H64
M3015
PDIP28
U630H64
D-01109
D-01101
PDIP28
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PDIP28
Abstract: U630H16
Text: U630H16 HardStore 2K x 8 nvSRAM F Packages: PDIP28 300 mil Features F High-performance CMOS nonvolatile static RAM 2048 x 8 bits F 25, 35 and 45 ns Access Times F 12, 20 and 25 ns Output Enable Access Times F Hardware STORE Initiation (STORE Cycle Time < 10 ms)
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U630H16
PDIP28
M3015
D-01109
D-01101
PDIP28
U630H16
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JEP95
Abstract: MS-001 PDIP28 pdip28300
Text: ZMD-Standard November 2001 Package PDIP28 300 mil MDS 735 Supersedes Edition 11.95 Dimensions in millimetres Based on JEDEC JEP95: MS-001 BF und GS-003 Seating Plane E L A A1 1 Dimensions b1 e 0,254 Z M c ° e1 28 1 D Pin 1 Index area Dimensions of Sub -Group B1
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PDIP28
JEP95:
MS-001
GS-003
Materia20
QS-000735-HD-03
JEP95
PDIP28
pdip28300
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PDIP28
Abstract: U632H64
Text: U632H64 PowerStore 8K x 8 nvSRAM F Packages: PDIP28 300 mil Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM 8192 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time
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U632H64
PDIP28
D-01109
D-01101
PDIP28
U632H64
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ENE 555
Abstract: ZMD cross reference PDIP28 U632H16
Text: U632H16 PowerStore 2K x 8 nvSRAM F Packages: Features F F F F F F F F F F F F F F F F PDIP28 300 mil PDIP28 (600 mi) SOP28 (300 mil) auto matically on power up. The U632H16 combines the high performance and ease of use of a fast High-performance CMOS no nSRAM with n onvolatile data intevolatile stati c RAM 2048 x 8 bits
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U632H16
PDIP28
U632H16
D-01109
D-01101
ENE 555
ZMD cross reference
PDIP28
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PDIP28
Abstract: U632H64
Text: U632H64 PowerStore 8K x 8 nvSRAM F Packages: PDIP28 300 mil Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM 8192 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time
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Original
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PDF
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U632H64
PDIP28
D-01109
D-01101
PDIP28
U632H64
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PDIP28
Abstract: U635H64
Text: U635H64 PowerStore 8K x 8 nvSRAM F Packages: PDIP28 300 mil Features F F F F F F F F F F F F F F F F High-performance CMOS nonvolatile static RAM 8192 x 8 bits 25, 35 and 45 ns Access Times 12, 20 and 25 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle
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Original
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U635H64
PDIP28
D-01109
D-01101
PDIP28
U635H64
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Untitled
Abstract: No abstract text available
Text: M28C16A M28C17A 5 F . 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V tor M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE PDIP28 (BS)
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M28C16A
M28C17A
150ns
250ns
M28C17A
M28C16-xxW
M28C16Aand
28C17Aare
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SCN2651
Abstract: interlace parity oscillator 16MHz scn2661 PDIP48
Text: O /> Synchronous Communication Product Line Technology Package Description Type(s Icc mA @ Vcc = 0-1 Mbps data rate SCN2651 PDIP28 0 to +70 Communication PLCC28 -4 0 to *85 Interface (PCI) 16 internal baud rates 5 -8 bit character (1,1.5, 2 stop bits in asynchronous mode)
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PDIP28
PLCC28
SCN2651
SCC26562
SCN68562
SCN26562/68562
PDIP48
PLCC52
SCN2651
interlace parity
oscillator 16MHz
scn2661
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON llllMJilLliMWIiei M28C64 64K 8K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: - 90 ns at 5V - 120ns at 3 V > SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION PDIP28 (BS)
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M28C64
120ns
M28C64-xxW
PDIP28
TSOP28
TSOP28
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Untitled
Abstract: No abstract text available
Text: M 28C 16A M 28C 17A 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLYVOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V for M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE I PDIP28 (BS)
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150ns
250ns
M28C16A
M28C17A
M28C16-xxW
M28C17Aare
M28C16A,
M28C17A
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