PMEG6002ELD Search Results

Contextual Info: Information about product quality of device type PMEG6002ELD Quality and reliability data provided by NXP Semiconductors is intended to be a non-binding estimate of product performance only. It does not imply that any performance levels reflected in such data can be met

Contextual Info: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 10 December 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

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Contextual Info: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 5 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

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Contextual Info: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 3 May 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

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Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: AN11470 Leadless Schottky diodes in a DC-to-DC step-up converter Rev. 1 — 22 April 2014 Application note Document information Info Content Keywords Schottky diode, boost converter, LED backlight, current source Abstract This application note discusses the application of DC-to-DC voltage up