PNZ202S Search Results

PN202S

Abstract: PNZ202S L10324
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 • Features 12.5 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. M Di ain sc te on na tin nc ue e/ d • Darlington output, high sensitivity

Contextual Info: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package

Contextual Info: Darlington Phototransistors PNZ202S PN202S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes • Small size (φ3) ceramic package

PN202S

Abstract: PNZ202S
Contextual Info: Darlington Phototransistors PNZ202S PN202S Darlington Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes 12.5 min. Small size (ø 3) ceramic package

Contextual Info: Darlington Phototransistors PNZ202S Darlington Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features Darlington output, high sensitivity Easy to combine with red and infrared light emitting diodes 12.5 min. Small size ø 3 ceramic package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 M Di ain sc te on na tin nc ue e/ d • Features 2.0±0.2 For optical control systems 12.5 min. • Darlington output, high sensitivity

PN202

Abstract: PN202S PNZ202S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • Darlington output, high sensitivity • Easy to combine with red and infrared light emitting diodes

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)