PQ160QH06N Search Results

Contextual Info: SCHOTTKY BARRIER DIODE MODULE PQ160QH06N 160A/60V NEW DEVELOPMENT PROVISIONAL DATA FEATU R ES °Four-Arms, Cathode Common to Base Plate ° Lo w Forward Voltage Drop ° Lo w Power L o s s , High Efficiency ° High Surge Capability Approx. Net Weight : 250 Grams

PQ160QH06N

Contextual Info: SBD MODULE 160A/60V PQ160QH06N OUTLINE DRAWING FEATURES φ * Four-Arms, Cathode Common to Base Plate * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification

Contextual Info: SBD 160A Avg 60 Volts PQ160QH06N •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT （単位 Dimension：mm） φ BASE 指定ナキ寸法公差ハ±0.5 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 ＊1

"diode module" 160a

Abstract: PQ160QH06N xfsm
Contextual Info: SCHOTTKY BARRIER DIODE MODULE PQ160QH06N 160A/60V NEW D E VE LO P M E N T PROVISIO NAL D A TA FEATURES ° Pour— Arms, Cathode Common to Base Plate ° Low Forward Voltage Drop ° Low Power 'Loss, High Efficiency • High Surge Capability Approx. Net Height : 250 Grams

PQ160QH06N

Contextual Info: SBD 160A Avg 60 Volts PQ160QH06N •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT （単位 Dimension：mm） φ BASE 指定ナキ寸法公差ハ±0.5 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 ＊1

Contextual Info: SBD MODULE 160A/60V PQ160QH06N OUTLINE DRAWING FEATURES φ * Four-Arms, Cathode Common to Base Plate * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification

Contextual Info: SCHOTTKY BARRIER DIODE MODULE PQ160QH06N 160A/60V 81.5 3.21 NEW DEVELOPMENT PROVISIONAL DATA — 70(2.75)— •53(2.08) 7.71.30) 4 7.3Î.29) >27(1.06) FEATURES S. g' ° Pour— Arms, Cathode Common to Base Plate 171.67) ■33- ° Low Forward Voltage Drop

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04