PTVA093002TC Search Results
PTVA093002TC Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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PTVA093002TCV1R250XTMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC RF FET LDMOS H-49248H-4 | Original | 208.14KB | |||
PTVA093002TCV1R250XUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS | Original | 203.25KB | |||
PTVA093002TCV1XWSA1 |
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IC RF FET LDMOS H-49248H-4 | Original | 377.62KB | 3 |
PTVA093002TC Price and Stock
Infineon Technologies AG PTVA093002TCV1R250XUMA1RF MOSFET LDMOS 50V H-49248H-4 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PTVA093002TCV1R250XUMA1 | Reel |
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Buy Now | |||||||
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PTVA093002TCV1R250XUMA1 | Reel | 111 Weeks | 250 |
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Get Quote |
PTVA093002TC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PTFB090901EAContextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB |
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PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA | |
Contextual Info: PTVA093002TC Thermally-Enhanced High Power RF LDMOS FET 300 W, 50 V, 703 – 960 MHz Description The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design, |
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PTVA093002TC PTVA093002TC 300-watt 50-ohm | |
H-49248H-4Contextual Info: PTVA093002TC Description Advance Specifications describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact |
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PTVA093002TC PTVA093002TC 300-watt H-49248H-4 |