PUB4112 Search Results

PU4112

Abstract: PU4212 PUB4112 PUB4212
Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.5±0.15 1.0±0.25 0.5±0.15 2.54±0.2 9 x 2.54 = 22.86±0.25

Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)

PU4112

Abstract: PU4212 PUB4112 PUB4212
Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) M Di ain sc te on na tin nc ue e/ d Unit: mm 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)

PU4212

Abstract: PUB4112 PUB4212 PU4112
Contextual Info: Power Transistor Arrays PUB4112 PU4112 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4212 (PU4212) Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130

Contextual Info: Power Transistor Arrays PUB4112 PU4112 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4212 (PU4212) Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 130

PU4112

Abstract: PU4212 PUB4112 PUB4212
Contextual Info: Power Transistor Arrays PUB4112 PU4112 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4212 (PU4212) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

Contextual Info: Power Transistor Arrays PUB4112 PU4112 Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4212 (PU4212) Unit: mm 9.5±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and