Untitled
Abstract: No abstract text available
Text: PGG205-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG205-83
Power200m
Voltage90
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Untitled
Abstract: No abstract text available
Text: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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ML4941
Power200m
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Untitled
Abstract: No abstract text available
Text: VAO32EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current33m Semiconductor MaterialSilicon Package StylePill-C
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VAO32EN22
Power200m
Voltage110
Current33m
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Untitled
Abstract: No abstract text available
Text: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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MS856B
Power200m
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Untitled
Abstract: No abstract text available
Text: PGG205-82 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG205-82
Power200m
Voltage90
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Untitled
Abstract: No abstract text available
Text: VAO12EN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-C
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VAO12EN21
Power200m
Voltage80
Current45m
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Untitled
Abstract: No abstract text available
Text: DGB8532 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)12.4G Frequency Max. (Hz)16G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current700m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8532
Power200m
Current700m
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Untitled
Abstract: No abstract text available
Text: PGG202-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG202-83
Power200m
Voltage110
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Untitled
Abstract: No abstract text available
Text: VAO12EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-B
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VAO12EN22
Power200m
Voltage80
Current45m
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Untitled
Abstract: No abstract text available
Text: GC5647A Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)4.0G Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current530m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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GC5647A
Power200m
Voltage15
Current530m
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Untitled
Abstract: No abstract text available
Text: VSQ9119S2 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz) Frequency Max. (Hz)44GÂ Efficiency Min.10 V(Oper.) Nom.(V) Oper. Voltage11 I(Oper.) Typ.(A) Oper. Current200m Semiconductor MaterialInP Package StyleScrew Mounting StyleT
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VSQ9119S2
Power200m
Voltage11
Current200m
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AX3120
Abstract: S3478
Text: 19-1390; RevO; 10/98 A M X IA 1 L o w - P r o f i l e , 3V, 1 2 0 ^ A , I r DA I n f r a r e d T r a n s c e i v e r The MAX3120 IrDA 1.2-com patible infrared transceiver is optim ized for battery-pow ered, space-constrained applications. It consumes only 120^A while supporting
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200mA,
MAX3120
115kbps
AX3120
S3478
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Untitled
Abstract: No abstract text available
Text: 19-1390; Rev 0; 10/98 >kl>JX I>kl L o w - P r o f i l e , 3V, 1 2 0 f j A , I rDA I n f r a r e d T r a n s c e i v e r Description The MAX3120 IrDA 1.2-com patible infrared transceiver is optim ized for battery-pow ered, space-constrained applications. It consumes only 120pA while supporting
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MAX3120
120pA
115kbps
AX3120
MS012-XX
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