POWER33 Search Results

Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

POWER33

Abstract: IPCA610D sac 305 IPC-SM-7525A J-STD-001C IPC-A-610D IPC-4101B FDMC8554 IPC-7525 FDMC2523P
Contextual Info: AN-9040 Assembly Guidelines for Power33 Packaging By Dennis Lang INTRODUCTION BOARD MOUNTING The Fairchild Power33 uses a flat leaded package to achieve SO-8 type performance in a form factor that is 70% smaller. This packaging technology has been increasingly used for power related

FDMC8200S

Abstract: Power33 byr10-100
Contextual Info: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

Contextual Info: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

Contextual Info: FDMC7200 Dual N-Channel PowerTrench MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 23.5 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

6TPF330M9L

Abstract: 6TPF330M 6TPD470M sanyo 6TPF330M9L KTS250B336M55N0T00 6TPF330M9L SANYO POWER56 FAN5236 BAT54 R718
Contextual Info: FAIRCHILD SEMICONDUCTOR DUAL POWER56/POWER33DEMO BOARD 1. Description The Dual Power56 and Power33 demo board uses Fairchild Semiconductor’s FAN5236 controller. It may be used to evaluate the performance of Fairchild’s new Power33 3x3MLP and Dual-Power56 (5x6MLP 2-in-1) MOSFETS. The

Contextual Info: FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a dual power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

sot-23 pinout

Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
Contextual Info: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx

Contextual Info: FDMC7200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 22 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

CQ116

Abstract: FDMC8200
Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

2326S

Contextual Info: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description „ Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This

wurth 749022017

Abstract: 749022016 DC1567 DC1814A-B CRCW0402100KJNEA 13W SOT23 CRCW0603100KJNEA fdn8601 schematic diagram 48V power supply Poe POWER33
Contextual Info: DEMO MANUAL DC1788A LT4275 LTPoE+, IEEE 802.3at/ IEEE 802.3af Compliant PD Controller DESCRIPTION Demonstration circuit 1788A features the LT 4275, a fourth generation powered device PD controller for Power over Ethernet (PoE) applications. The DC1788A is available in DC1788A-A, DC1788A-B, and

AU-6433

Abstract: ISL6251 AU6433-B52-GBL-GR am4825p CN603 CN701 d8107 1000-F50E-02R fdmc4435bz s104 85a
Contextual Info: 5 4 3 2 1 D D ACER_BAP51/BAP52 C C MINI-CARD BOARD 2009.06.30 B B A A EE DRAWER DESIGN CHECK RESPONSIBLE SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX 5 4 3 2 DATE POWER DATE INVENTEC D-CS-1310A2271201-ALG TITLE BAP51/BAP52 MINI-CARD/B VER: CODE SIZE Custom A01

88910-5204m

Abstract: ISL6251 AU-6433 AU6433B52-GBL-GR LTT-SS801U-13 AM4825P LG-2413S-2 apl3510a CN901 CN602
Contextual Info: 5 4 3 2 1 D D ACER_BAP41/BXP41 C C CARD READER BOARD 2009.06.30 B B A A EE DRAWER DESIGN CHECK RESPONSIBLE SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX 5 4 3 2 DATE POWER DATE INVENTEC D-CS-1310A2271201-ALG TITLE BAP41/BXP41 Card Reader/B VER: CODE SIZE

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: DTL5A-LC OBSOLETE PRODUCT Features DATEL's DTL5A-LC is a serial-input controlled electronic loads featuring a low compliance voltage operation down to 0.6 Volts ! Similar to DATEL's DTL3A, the DTL5A-LC also offers a loading current range of 0 to 2.0A full scale range with a loading

Contextual Info: FDMC86340 N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

DM-4105

Abstract: DM-4105-1
Contextual Info: DM-4105 4½-Digit, Differential LCD Display with Data Outputs www.murata-ps.com enquiries email: sales@murata-ps.com, tel: +1 508 339 3000 DATEL, Inc., Mansfield, MA 02048 USA • Tel: (508)339-3000, (800)233-2765 Fax: (508)339-6356Technical • Email: sales@datel.com

Contextual Info: FDMC86340 N-Channel Power Trench MOSFET 80 V, 48 A, 6.5 mΩ Features General Description „ Max rDS on = 6.5 mΩ at VGS = 10 V, ID = 14 A „ High performance technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has

Contextual Info: FDMC86340 N-Channel Shielded Gate Power Trench MOSFET 80 V, 48 A, 6.5 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been

Contextual Info: FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mΩ Features General Description ̈ Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node