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    BGY113A

    Abstract: BGY113B
    Text: N AUER PHILIPS/DISCRETE t.'ÌE » • tbS3*î31 Q03G5Û3 b53 H A P X Philips Components BGY113A/113B Datasheet status Preliminary specification date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in


    OCR Scan     		PDF BGY113A/113B BGY113A BGY113B OT288D. BGY113B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is DRAM MODULE MH4M325CXJ-5,-6,-7/ MH4M325CNXJ-5,-6,-7 HYPER PAGE MODE 134217728-BIT (4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M325CXJ/CNXJ is 4194304-word x 32-bit dynamic RAM. This consists of eight industry standard 4M x 4


    OCR Scan     		PDF MH4M325CXJ-5 MH4M325CNXJ-5 134217728-BIT 4194304-WQRD 32-BIT) MH4M325CXJ/CNXJ 4194304-word 32-bit MH4M325CXJ MH4M325CNXJ

    ba102

    Abstract: IRFP150 TSD4M150F TSD4M150V T-39-15 sc0305
    Text: S G ~ S - T H OMS ON 3DE » • 7^51537 DD3DS3Ö 4 TSD4M150F TSD4M150V SGS-THOMSON pBv;S IQÄ1Tß»D gS N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS(on Id TS D 4M 150F/V 100 V 0.014 0 135 A . ■ ■ . « . ■ ■ HIGH CURRENT POWER MOS MODULE


    OCR Scan     		PDF TSD4M150F TSD4M150V TSD4M150F/V IRFP150 TSD4M150V T-91-20 O-240) ba102 TSD4M150F T-39-15 sc0305