Q25752Ô Search Results

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

Am27C512s

Abstract: AM27C512-155
Contextual Info: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current

28F010

Abstract: AM28F010 AMD 478 socket pinout
Contextual Info: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption

Contextual Info: ADV MICRO b4E MEMORY D • 02S7SEÖ 00321SÖ 7bD ■ Advanced Micro Devices Am27X256 256 Kilobit (32,768 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

Contextual Info: PRELIM INARY Advanced Micro Devices AmC002AFLKA 2 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 mA typical standby current

Contextual Info: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: Advanced Micro Devices Am27C2048 2 Megabit 131,072 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ Fast access tim e ■ — 70 ns ■ Low power consum ption 100% Flashrite programming — Typical programming time of 16 seconds — 100 jiA maximum CMOS standby current

Contextual Info: a Advanced Micro Devices A m 2 7 C 1 2 8 128 Kilobit 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time Latch-up protected to 100 mA from -1 V to Vcc +1 V — 45 ns High noise immunity ■ Low power consumption Versatile features for simple interfacing

MAE A1470

Contextual Info: ADV MICRO MEMORY 3ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ A MD 4 '-* 4 6 -1 2 -2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tlme-S5 ns ■ JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current

Contextual Info: Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single 3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (battery-operated systems)

Contextual Info: PRELIM INARY n Advanced Micro Devices AmCOOIAFLKA 1 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current

Contextual Info: 3ÛE D • Q2S752Ô GGETSSH 7 *AM»4 ADV MICRO MEMORY ■ «M iaiÉ isi T -4 6 -1 3 -2 ? Am27C100 7 1 Advanced Micro Devices 1Megabit (131,072 x 8-Bit) ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ ■ ■ High speed Flashrlte programming