QEC121 Search Results

QEC121

Contextual Info: EU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 126 3.20 REFERENCE SURFACE T h e Q EC 12X is an 8 8 0 nm AIG aA s LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder

24CT

Contextual Info: Fa OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The Q E C 12X is an 88 0 nm AIG aA s LED en capsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution. ■ Steel lead fram es for im proved reliability in solder

QEC123

Abstract: QEC121 QEC122
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QEC121 QEC122 QEC123 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) SCHEMATIC 0.018 (0.46)

QED234

Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
Contextual Info: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9

QED122

Abstract: QEC121 QEC122 QED121 QED123 diode 465 nm 5 mm tinted radiant energy
Contextual Info: r*T | m m É éiìwiììbA ^ S ü J H i OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution.

QEC121

Contextual Info: ü A IGaA s INFRARED EMITTING DIODE OPTOELECTRONICS QEC121/122 DESCRIPTION PACKAGE DIMENSIONS I REFERENCE SURFACE .126 3.20 .106(2.69) The QEC12X is an 880 nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-1 package. FEATURES J .042(1.07) ±0 1 0 (± 2 5 )

Contextual Info: QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QEC121, QEC122 and QEC123 are 880nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 package. ■ Chip material = AlGaAs ■ Package type: T-1 3mm

Fairchild 902

Abstract: QEC121 QEC123 QEC122
Contextual Info: QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QEC121, QEC122 and QEC123 are 880nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 package. ■ Chip material = AlGaAs ■ Package type: T-1 3mm

QEC123

Abstract: QEC121 QEC122 QSC112
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QEC121 QEC122 QEC123 PACKAGE DIMENSIONS 0.116 2.95 REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM 0.155 (3.94) 0.018 (0.46) SQ. (2X)

Contextual Info: OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES T-1 3 mm Part Number 76 NOM jr~r le Angle @ 1/2 Power Radiant Intensity min max units V F/IF (V)l(mA) max I r/V r (ViA)/(V) max Notes 940 nm GaAs \ .052(1 32) .032 (.082) Emission JT | QEC112 ±8° 6

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

Contextual Info: [ * o OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES t E m issio n T-1 3 mm A n q ie • 2 Power i - 1 T W}/ n i i i ? im AI/IV Tim in « ì x u rliti rn a * m ax 940 nm GaAs Í 76'i NOM .062 1.1.32 .032 (-052) !r /VP; ¿di.-iní “ T 800 (20.3)

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

QED223

Abstract: diode Sr 203
Contextual Info: Plastic Light Emitting Diodes T-1 3 mm Diode Package 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) Part Number Ie @ 100 mA IF (mW/sr) min max VF @ 100 mA IF (V) max IR @ 5 V VR (µA)

se113

Contextual Info: INFRARED COMPONENTS AND ASSEMBLIES opmLEcmmcs INFRARED COMPONENTS AND ASSEMBLIES Alphanumeric Product Listing Product Page Product Page Product Page 1N6264 . .3-127 1N6265 . . 3-131 1N6266 . . 3-135

Contextual Info: GEO OPTOELECTRONICS PLASTIC INFRARED LIGHT EM ITTIN G DIODES E m is sio n T-1 3 mm A n g le @ Part Num ber •e R a d ia n t In te n s ity 1/2 P o w e r V F/ I F ■r ' V r V /(m A | ( mA )/ i v i m in max u n its m ax max 30 mW/sr 1.50/20 10/5 1 — mW/sr

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA

ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22