QP506W Search Results

OP506W

Abstract: S-7600
Contextual Info: P ro d u c t B u lle tin O P506W bTTÖSflO 0 0 0 2 b l 7 OPTEK 701 J u n e 1996 NPN Silicon Phototransistor Type QP506W • Wide receiving angle • T-1 package style • Small package size for space limited applications D e s c rip tio n The OP506W consists of an NPN silicon

Contextual Info: 0 . OPTEK Product Bulletin OP166W June 1996 G aA s Plastic Infrared Emitting Diode Type OP166W •M :r ; IS .060 I .52 NOM SHORTER THAN ANOOE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS) Features Absolute Maximum R atings (T a = 2 5 ° C u n le s s o th e rw ise noted)

OP506W

Contextual Info: OPTEK Product Bulletin OP506W June 1996 NPN Silicon Phototransistor Type OP5Q6W MEASUREMENT SURFACE , .155 4.19 115 (2.92) ' .145 (3.68) - .050 (1.27)N0M y , .125 (3.18) .100 (2.54) NOM .025 (0.64) .015 (0.38) ' .115 (2.92) L t : -.500 (12.70)MIN .030 (0.76)