QSD122 Search Results

Infrared Phototransistor

Abstract: "infrared phototransistor" qed12x QED22X
Contextual Info: QSD122, QSD123, QSD124 Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSD122/123/124 is a phototransistor encapsulated in an infrared transparent, black T-1 3/4 package. ■ Package Type: T-1 3/4 ■ Matched Emitter: QED12X/QED22X/QED23X

qed12x

Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

D880

Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

qed12x

Abstract: QED121 QED122 QED123 QSD122
Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • D= 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

QSD12X

Contextual Info: [«xa PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTION The QSD12X is a silicon phototransistor encapsulated in an infrared transparent, black T-1% package. FEATURES Tight production distribution. Steel lead fram es for im proved reliability in solder

TIP 122 100 V

Abstract: TIP 122 transistor QED121 QED122 QED123 qsd122
Contextual Info: QED121/122/123 PLASTIC INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.195 4.95 FEATURES • != 880 nm REFERENCE SURFACE • Chip material = AlGaAs 0.305 (7.75) • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Narrow Emission Angle, 18°

QSD123/QSD124

Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES:

Contextual Info: ÛUALITY TECHNOLO GIES CORP 3flE D B 74bbô51 G G G 3 ei3e] b E3ÖTY PHOTOSENSORS Characteristics at 25° C Part Number QSA122 QSA123 QSA124 QSA223 QSA224 QSB113 QSB114 QSB213 QSB214 QSC112 QSC113 QSC114 QSD122 QSD123 QSD124 QSD422 QSD423 QSD424 QSD613 QSD614

Contextual Info: EO PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTIO N T h e Q S D 12X is a silicon phototransistor en capsulated in an infrared transparent, black T-13/4 package. FEA TU RES • Tight production distribution. ■ Steel lead fram es for improved reliability in solder

QSD124

Abstract: QSD122 QSD123
Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD122 QSD123 QSD124 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN EMITTER COLLECTOR SCHEMATIC 0.500 (1.25) 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) NOTES:

Contextual Info: EO PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTION The QSD12X is a silicon phototransistor encapsulated in an infrared transparent, black T-1% package. FEATURES • Tight production distribution. ■ Steel lead frames for improved reliability in solder

QSD122

Abstract: VISIBLE LIGHT PHOTOTRANSISTOR QED123 QSD123 QSD124
Contextual Info: PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD122/123/124 PACKAGE DIMENSIONS DESCRIPTION Th e Q S D 12X is a silicon phototransistor encapsulated in an infrared transparent, black T-1% package. FEATURES • Tight production distribution. ■ Steel lead fram es for im proved reliability in solder

QED22X

Abstract: QED221 QED222 QED223
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED221 QED222 QED223 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) ANODE

hma121

Abstract: optocoupler crossreference H11C4 cross reference QED234 opto h11a817 H11AA81 infrared remote control ON/OFF switch application KAT00 OPTOCOUPLER 3700 Opto-Sensor reflective
Contextual Info: Optoelectronics – No matter where you look. Across the board. Around the world. There we are. There we are. Fairchild is a leader in the design and production of optocouplers, LED lamps, LED industry-standard displays, and infrared components. Offering

QED634

Abstract: QSD122
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED634 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM SCHEMATIC 0.240 (6.10) 0.215 (5.45) ANODE 0.020 (0.51) SQ. (2X) CATHODE NOTES:

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

QED121

Abstract: QED123 Fairchild 902 QED122
Contextual Info: QED121, QED122, QED123 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED121, QED122 and QED123 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs

phototransistor

Abstract: phototransistor 600 nm qsd122
Contextual Info: Plastic Silicon Photosensors T-1 3 mm Detector Package 0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) EMITTER 0.100 (2.54) NOM Test Conditions Ee ␭p (nm) (mW/cm2) IC (ON) (mA) min max

MAN6760 function

Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
Contextual Info: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

QED233

Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED233 QED234 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.305 (7.75) 0.040 (1.02) NOM 0.800 (20.3) MIN 0.050 (1.25) CATHODE 0.100 (2.54) NOM 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X) SCHEMATIC NOTES: ANODE