QSD128 Search Results

VISIBLE LIGHT PHOTOTRANSISTOR

Abstract: visible phototransistor ST1664 Silicon Recognition Infrared Phototransistor QED123 ST-1664 QSD128 phototransistor visible light
Contextual Info: PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD128 PACKAGE DIMENSIONS DESCRIPTION The QSD128 is a phototransistor encapsulated in an infrared transparent, black T-1% package. The flat on the package indicates the collector lead. FEATURE • Steel lead frames for improved reliability in

VISIBLE LIGHT PHOTOTRANSISTOR

Abstract: phototransistor visible light
Contextual Info: fr 9 m ÊÊm rnmÈmmm». B S PLASTIC SILICON PHOTOTRANSISTOR ^ u f li OPTOELECTRONICS QSD128 PACKAGE DIMENSIONS DESCRIPTION The QSD128 is a phototransistor encapsulated in an infrared transparent, black T-1% package. The flat on the package indicates the collector lead.

Contextual Info: æO PLASTIC SILICON PHOTOTRANSISTOR OPTIELECIRIIICS QSD128 II PACKAGE DIMENSIONS DESCRIPTION The QSD128 is a phototransistor encapsulated in an infrared transparent, black T-1% package. The flat on the package indicates the collector lead. FEATURE • Steel lead frames for improved reliability in

QSD128

Contextual Info: PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD128 PACKAGE DIMENSIONS 0.195 4.95 REFERENCE SURFACE 0.800 (20.3) MIN 0.305 (7.75) 0.040 (1.02) NOM COLLECTOR EMITTTER 0.050 (1.25) SCHEMATIC 0.100 (2.54) NOM COLLECTOR 0.240 (6.10) 0.215 (5.45) 0.020 (0.51) SQ. (2X)

Contextual Info: PLASTIC SILICON PHOTOTRANSISTOR OPTOELECÏROHIC5 QSD128 PACKAGE DIMENSIONS DESCRIPTION The QSD128 is a phototransistor encapsulated in an infrared transparent, black T-1% package. The flat on the package indicates the collector lead. FEATURE Steel lead frames for improved reliability in

sc114

Contextual Info: [sO OPTOELECTRONICS PLASTIC SILICON INFRARED PHOTOSENSORS FUì r . e s31><>r ' T-1 3 mm P»li SMin il b «i t 3V Í SÍI OI !- 1, ït e n s il i V it y if ii n i i ! ; Si u r p. í :• /n ;i m a* í Not ú » Phototransistor .76 NOM I .052 (1.32) .032 (.082)

Contextual Info: OPTOELECTRONICS PLASTIC SILICON INFRARED PHOTOSENSORS T-1 3 mm P a rt N um ber J b v ceo ’c |ON| m in m a x u n its V m in ^Eo /V ce (nA)/(V) m ax N o te s P h o t o t r a n s is t o r NOM : „ 32, R e c e p t io n A n g le @ 1/2 P o w e r T QSC112 ±8°

QSD123/QSD124

Contextual Info: OPTOELECTRONICS T-1 3 mm PLASTIC SILICON INFRARED PHOTOSENSORS .116 2.95 f REFERENCE N 193 (4.90) I' \ 030 (.76) NOM 1 I \ \ 052 Q.32) .032 (.082) I" P a rt N u m b er R ec ep tio n A n gle @ 1/2 S e n s itiv ity •c(ON) min m ax units B V ceo (V) min •cEO/ V CE

ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22