R07DS0008EJ0100 Search Results
R07DS0008EJ0100 Datasheets Context Search
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Contextual Info: Preliminary Data Sheet PA2806 R07DS0008EJ0100 Rev.1.00 June 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS on 1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) |
Original |
PA2806 R07DS0008EJ0100 PA2806 PA2806T1L-E1-AY PA2806T1L-E2-AY | |
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Contextual Info: Preliminary Data Sheet PA2806 R07DS0008EJ0100 Rev.1.00 June 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS on 1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) |
Original |
PA2806 R07DS0008EJ0100 PA2806 PA2806T1L-E1-AY PA2806T1L-E2-AY |