R07DS0182EJ0100 Search Results
R07DS0182EJ0100 Datasheets Context Search
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Contextual Info: Preliminary Data Sheet NP35N04YLG R07DS0182EJ0100 Rev.1.00 Oct 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A) |
Original |
NP35N04YLG R07DS0182EJ0100 NP35N04YLG AEC-Q101 | |
NP35N04YLGContextual Info: Preliminary Data Sheet NP35N04YLG R07DS0182EJ0100 Rev.1.00 Oct 22, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP35N04YLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 9.7 mΩ MAX. (VGS = 10 V, ID = 17.5 A) |
Original |
NP35N04YLG R07DS0182EJ0100 NP35N04YLG AEC-Q101 |