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RJH60F3 Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00 Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0100 Rev.1.00 Nov 09, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package	Original	RJH60F3DPK R07DS0199EJ0100 PRSS0004ZE-A RJH60F3 PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00	PDF

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RJH60F3

Abstract: PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00
Contextual Info: Preliminary Datasheet RJH60F3DPK Silicon N Channel IGBT High Speed Power Switching R07DS0199EJ0100 Rev.1.00 Nov 09, 2010 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (IC = 20 A, VGE = 15V, Ta = 25°C)  Built in fast recovery diode in one package

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RJH60F3DPK R07DS0199EJ0100 PRSS0004ZE-A RJH60F3 PRSS0004ZE-A SC-65 RJH60F RJH60F3DPK-00

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