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RJH60F5 Abstract: RJH60F5DPQ-A0 Text: Preliminary Datasheet RJH60F5DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0326EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package	Original	PDF	RJH60F5DPQ-A0 R07DS0326EJ0100 PRSS0003ZH-A O-247A) RJH60F5 RJH60F5DPQ-A0

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RJH60F5

Abstract: RJH60F5DPQ-A0
Text: Preliminary Datasheet RJH60F5DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0326EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package

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RJH60F5DPQ-A0 R07DS0326EJ0100 PRSS0003ZH-A O-247A) RJH60F5 RJH60F5DPQ-A0