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Contextual Info: Preliminary Datasheet HAT1093C R07DS0605EJ0700 Rev.7.00 Mar 19, 2014 Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS on = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting |
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HAT1093C R07DS0605EJ0700 PWSF0006JA-A |