Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NESG210719 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold 19, 1608 PKG <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
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Original
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PDF
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NESG210719
R09DS0051EJ0400
NESG210719
NESG210719-A
NESG210719-T1
NESG210719-T1-A
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maximum gain s2p
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary NESG210719 Data Sheet NPN SiGe RF Transistor for Low Noise, High-Gain Amplification 3-Pin Ultra Super Minimold 19, 1608 PKG <R> R09DS0051EJ0400 Rev.4.00 Sep 24, 2012 FEATURES • The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
|
Original
|
PDF
|
NESG210719
R09DS0051EJ0400
NESG210719
NESG210719-T1
NESG210719-A
NESG210719-T1-A
maximum gain s2p
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