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R1RP0408D Price and Stock

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Renesas Electronics Corporation R1RP0408DGE-2LR-B1 IC SRAM 4MBIT PARALLEL 36SOJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1RP0408DGE-2LR-B1	Tube	100		1	1 $6.32 10 $6.32 100 $5.09197 1000 $5.09197 10000 $5.09197	Buy Now
Renesas Electronics Corporation R1RP0408DGE-2PI-B1 IC SRAM 4MBIT PARALLEL 36SOJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1RP0408DGE-2PI-B1	Tube	96		1	1 $6.32 10 $6.32 100 $5.08379 1000 $5.08379 10000 $5.08379	Buy Now
Renesas Electronics Corporation R1RP0408DGE-2PR-B1 IC SRAM 4MBIT PARALLEL 36SOJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1RP0408DGE-2PR-B1	Tube	9		1	1 $5.8 10 $5.8 100 $5.8 1000 $5.8 10000 $5.8	Buy Now
Renesas Electronics Corporation R1RP0408DGE-2PI-B0 IC SRAM 4MBIT PARALLEL 36SOJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1RP0408DGE-2PI-B0	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation R1RP0408DGE-2LR-B0 IC SRAM 4MBIT PARALLEL 36SOJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1RP0408DGE-2LR-B0	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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R1RP0408D Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
R1RP0408DGE-2LR		Renesas Technology	4M High Speed SRAM (512-kword x 8-bit)		Original	PDF	83.42KB	14
R1RP0408DGE-2LR#B0		Renesas Electronics America	Integrated Circuits (ICs) - Memory - IC SRAM 4M FAST 36-SOJ		Original	PDF	144.57KB
R1RP0408DGE-2PI		Renesas Technology	4M High Speed SRAM (512-kword x 8-bit)		Original	PDF	76.53KB	12
R1RP0408DGE-2PI#B0		Renesas Electronics America	Integrated Circuits (ICs) - Memory - IC SRAM 4M FAST 36-SOJ		Original	PDF	96.42KB
R1RP0408DGE-2PR		Renesas Technology	4M High Speed SRAM (512-kword x 8-bit)		Original	PDF	83.44KB	14
R1RP0408DGE-2PR#B0		Renesas Electronics America	Integrated Circuits (ICs) - Memory - IC SRAM 4M FAST 36-SOJ		Original	PDF	144.57KB
R1RP0408DI		Renesas Technology	Wide Temperature Range Version 4M High Speed SRAM (512-kword x 8-bit)		Original	PDF	76.5KB	12
R1RP0408DI Series		Renesas Technology	Wide Temperature Range Version 4M High Speed SRAM (512-kword x 8-bit)		Original	PDF	76.52KB	12
R1RP0408D Series		Renesas Technology	4M High Speed SRAM (512-kword x 8-bit)		Original	PDF	83.43KB	14

R1RP0408D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
R1RP0408DGE-2PR Abstract: R1RP0408D R1RP0408DGE-2LR Contextual Info: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit	Original	R1RP0408D 512-kword REJ03C0112-0100Z 512-k 400-mil 36-pin R1RP0408DGE-2PR R1RP0408DGE-2LR	PDF
R1RP0408D Abstract: R1RP0408DGE-2LR R1RP0408DGE-2PR Contextual Info: R1RP0408D Series 4M High Speed SRAM 512-kword x 8-bit REJ03C0112-0200 Rev. 2.00 Dec.1.2008 Description The R1RP0408D Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit	Original	R1RP0408D 512-kword REJ03C0112-0200 512-k 400-mil 36-pin R1RP0408DGE-2LR R1RP0408DGE-2PR	PDF
R1RP0408DGE-2PI Abstract: R1RP0408DI Contextual Info: R1RP0408DI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit REJ03C0114-0100Z Rev. 1.00 Mar.12.2004 Description The R1RP0408DI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit	Original	R1RP0408DI 512-kword REJ03C0114-0100Z 512-k 400-mil 36-pin R1RP0408DGE-2PI	PDF
K6X8016T3B-UF55 Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70 Contextual Info: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm	Original	AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70	PDF
R1RP0408DGE-2PI Abstract: R1RP0408DI Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
HN58V1001TI-25E Abstract: R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI Contextual Info: 2009.04 Renesas General-Purpose Memory General Catalog www.renesas.com Highly Reliable Technological Innovation Ever faster, ever more power efficient…. Our advanced technology delivers To give your products the edge in today’s tough competitive higher quality and reliability,	Original	REJ01C0001-1000 HN58V1001TI-25E R1EX25256ATA00I renesas tcam tcam renesas cypress tcam idt tcam r1qaa7218rbg R1LV0816A M5M51008DFP-55H R1LV1616RBG-7SI	PDF
R1RP0408D Abstract: R1RP0408DGE-2LR R1RP0408DGE-2PR Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF