RA45H7687M1 Search Results

RA45H7687M1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
RA45H7687M1		Mitsubishi	RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO		Original	PDF	168.65KB	9
RA45H7687M1-101		Mitsubishi	RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO		Original	PDF	168.65KB	9

RA45H7687M1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RA45H7687M1 Abstract: RA45H8994M1 AN-900-027-B Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-027-B Date : 10th May. 2007 Rev. date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1	Original	AN-900-027-B RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz RA45H7687M1 AN-900-027-B	PDF
RF MOSFET MODULE Abstract: RA45H7687M1 RA45H7687M1-101 Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to	Original	RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz RF MOSFET MODULE RA45H7687M1-101	PDF
RA45H7687M1 Abstract: mitsubishi rf sirf 1v GG13 Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-900-026 Date : 21st Feb. 2007 Prepared : K. Mori Confirmed : S. Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: Recommendation of the output power control for RA45H7687M1	Original	AN-900-026 RA45H7687M1 RA45H7687M1, RA45H7687M1 20dBm AN-900-026 806MHz mitsubishi rf sirf 1v GG13	PDF
RA45H7687M1 Abstract: RA45H7687M1-101 45WATT DD 128 D transistor Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to	Original	RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101 45WATT DD 128 D transistor	PDF
Contextual Info: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the	Original	RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz	PDF
d408 Abstract: DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1 RA45H7687M1-101 DD 128 transistor Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 764-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 764- to	Original	RA45H7687M1 764-870MHz RA45H7687M1 45-watt 870-MHz d408 DD 128 D transistor GG13 LT 7212 MHz-860 RA45H7687M1-101 DD 128 transistor	PDF
RA45H7687M1 Abstract: RA45H7687M1-101 Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to	Original	RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz RA45H7687M1-101	PDF
RA45H7687M1 Abstract: RA45H8994M1 PIN3D mitsubishi Lot No Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027-A Date : 10th May. 2007 Rev. date : 7th Jan. 2010 Prepared : K. Mori Confirmed : S.Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1	Original	AN-900-027-A RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz RA45H7687M1 PIN3D mitsubishi Lot No	PDF
mitsubishi Lot No Abstract: AN-900-027 RA45H7687M1 RA45H8994M1 MITSUBISHI APPLICATION NOTE RF POWER Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-027 Date : 10th May. 2007 Prepared : K. Mori Confirmed : S.Kametani Taking charge of SiRF by Miyoshi Electronics SUBJECT: AM-AM, AM-PM and Vgg2-PM for RA45H8994M1 and RA45H7687M1 GENERAL:	Original	AN-900-027 RA45H8994M1 RA45H7687M1 RA45H8994M1/7687M1 50ohm, 06XXA 835MHz mitsubishi Lot No AN-900-027 RA45H7687M1 MITSUBISHI APPLICATION NOTE RF POWER	PDF
Contextual Info: < Silicon RF Power Modules > RA45H7687M1 RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 763- to 870-MHz range. The battery can be connected directly to the drain of the	Original	RA45H7687M1 763-870MHz RA45H7687M1 45-watt 870-MHz Oct2011	PDF
341V Abstract: RA45H7687M1 22an VGG13 Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-026-A Date : 21st Feb. 2007 Rev.date : 7thJan. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control	Original	AN-900-026-A RA45H7687M1 RA45H7687M1, RA45H7687M1 806MHz 20dBm 341V 22an VGG13	PDF
RA45H7687M1 Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-026-B Date : 21st Feb. 2007 Rev.date : 30th Jun. 2010 Prepared : K. Mori Confirmed : S. Kametani Taking charge of Silicon RF by Miyoshi Electronics SUBJECT: Recommendation of the output power control	Original	AN-900-026-B RA45H7687M1 RA45H7687M1, RA45H7687M1 20dBm 806MHz	PDF