RFG60 Search Results

60P06E

Abstract: 6b69e RS111
Contextual Info: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l

50V 60A MOSFET

Abstract: RFG60P05E 124E-12
Contextual Info: RFG60P05E S E M I C O N D U C T O R 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 60A, 50V JEDEC STYLE TO-247 • rDS ON = 0.030Ω SOURCE DRAIN GATE • Temperature Compensating PSPICE Model

RFP60P03

Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334
Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet January 2002 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

Contextual Info: P *3 3 S RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­

Contextual Info: tïï\ H U Ë J S E M I C O N D U C T O R A R R RFG60P06E IS 60A. 60V, ESD Rated. Avalanche Rated. P-Channel Enhancement-Mode Power MOSFET December 1995 Package Features JEDEC STYLE TO-247 • 60A, 60V ' SOURCE r DS ON = 0 -0 3 0 ^ • Temperature Compensating PSPICE Model

Contextual Info: RFG60P05E Semiconductor 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET September 1998 Features Description • 60A, 50V • Peak Current vs Pulse Width Curve This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes

RFG60P05E

Contextual Info: RFG60P05E in te fs il D a ta S h e e t J u ly 1 9 9 9 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0-030Q • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve

60p03

Abstract: PLIC
Contextual Info: f jì RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM HARRIS S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JE DEC S TYLE TO -247 SOURCE ’ rDS ON = 0.027S2 DRAIN • Temperature Compensating PSPICE Model

60P05E

Contextual Info: RFG60P05E RFG60P06E ÎD H a r r is P-Channel Enhancem ent-M ode Power Field-Effect Transistors MegaFETs January 1994 F ea tu re s • RFG60P05E = -60A, -50V, Package rD S ( 0 n) T O -2 4 7 T O P VIEW = 0.026ÎÎ • RFG 60P06E = -60A, -60V, rD S(0n) = 0.030fl

RFP60P03

Abstract: RF1S60P03SM RF1S60P03SM9A RFG60P03 TB334 IS421
Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs • 60A, 30V Formerly developmental type TA49045. Ordering Information PACKAGE 3951.3 Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

F1S60P03

Abstract: RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 RS-380
Contextual Info: RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM S E M I C O N D U C T O R 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 60A, 30V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.027Ω • Temperature Compensating PSPICE Model

rfg60p06

Contextual Info: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET eyrds ter- PART NUMBER RFG60P06E PACKAGE TO-247 3989.3 Features • 60A, 60V Title The RFG60P06E P-Channel power MOSFET is FG6 manufactured using the MegaFET process. This process,

40V 60A MOSFET

Abstract: RFG60P05E TB334
Contextual Info: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve

Contextual Info: RFG60P05E & HAS«» 60A, 50V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET D e c e m b e r 1995 Package Features JEDEC STYLE TO-247 • 60 A ,50V SOURCE • rDS ON = 0.03012 • Temperature Compensating PSPICE Model • 2kV ESD Rated

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: RFG60P06E
Contextual Info: interrii RFG60P06E D a ta S h e e t J u ly 1 9 9 9 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated

RFG60P06E

Contextual Info: RFG60P06E S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFET January 1996 Features Package • 60A, 60V JEDEC STYLE TO-247 SOURCE DRAIN GATE • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: RFG60P06E rfg60p06 TA09836
Contextual Info: RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 60V The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits

F1S60P03

Abstract: f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334
Contextual Info: [ /Title RFG60 P03, RFP60P 03, RF1S60 P03, RF1S60 P03SM /Subject (60A, 30V, RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using

RFG60P05E

Abstract: TB334
Contextual Info: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 50V RFG60P05E PACKAGE TO-247 • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve

Contextual Info: in te rrii RFG60P03, RFP60P03, RF1S60P03SM D a la S h e e t J u ly 1 9 9 9 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 5 1 .3 Features • 60A, 30V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

RFG60P06E

Abstract: P-CHANNEL 45A TO-247 POWER MOSFET rfg60p06
Contextual Info: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET • 60A, 60V • 2kV ESD Rated The RFG60P06E incorporates ESD protection and is designed to withstand 2kV Human Body Model of ESD. • Related Literature Formerly developmental type TA09836.

f1s60

Contextual Info: RFG60P03, RFP60P03, RF1S60P03SM Data Sheet Title FG6 03, P60 3, 1S6 03S bt A, V, 27 m, anwer OSTs utho eyrds ter- July 1999 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

24V 20A SIEMENS battery charger

Abstract: 48v to 24v buck an5435 an5430 an5424 AN5437 application note 54 ltc1149 LT1149 UPL1C222MRH SMP40P06
Contextual Info: Application Note 54 March 1993 Power Conversion from Milliamps to Amps at Ultra-High Efficiency Up to 95% Dimitry Goder Randy Flatness INTRODUCTION High efficiency is frequently the main goal for power supplies in portable computers and hand-held equipment.