RFHA3942D Search Results

Contextual Info: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete amplifier die designed for military communications, electronic warfare, general purpose broadband, commercial wireless infrastructure, and industrial/scientific/medical applications. Using

CDA 2170

Abstract: Gan hemt transistor RFMD rfha3942
Contextual Info: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die 35W Linear GaN on SiC Power Amplifier Die Package: Die RF OUT VD Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain = 16.3dB at 2GHz