RN1111 Search Results

Contextual Info: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT, RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02

RN1110MFV

Abstract: RN1111MFV RN2110MFV RN2111MFV
Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 0.4 0.8 ± 0.05 1 1 0.4 A wide range of resistor values is available for use in various circuits.

Contextual Info: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm

Contextual Info: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN2110FS, RN2111FS

Contextual Info: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

RN2110FV

Abstract: RN1110FV
Contextual Info: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV, RN1111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV and RN2111FV

RN1110F

Abstract: RN1111F RN2110F RN2111F
Contextual Info: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1110ACT

Abstract: RN1111ACT RN2110ACT RN2111ACT
Contextual Info: RN1110ACT, RN1111ACT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1110ACT,RN1111ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1110FS

Abstract: RN1111FS RN2110FS RN2111FS
Contextual Info: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.

RN1110MFV

Abstract: RN1111MFV RN2110MFV RN2111MFV
Contextual Info: RN1110MFV, RN1111MFV 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1110MFV, RN1111MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1110F

Abstract: RN1111F RN2110F RN2111F
Contextual Info: RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN1111CT Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single

RN1110

Abstract: RN1111 RN2110 RN2111
Contextual Info: RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110,RN1111 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1110MFV

Abstract: RN1111MFV RN2110MFV RN2111MFV
Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit: mm A wide range of resistor values is available for use in various circuits. z Complementary to the RN2110MFV,RN2111MFV

Toshiba xm

Contextual Info: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit: mm 1.2 ± 0.05 0.22 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of parts, so

Contextual Info: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits. z

RN2111FS

Contextual Info: RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN1110FS, RN1111FS

RN1111FV

Abstract: RN1110FV RN2110FV RN2111FV
Contextual Info: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV,RN1111FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplify circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV, RN2111FV

RN1110FS

Abstract: RN1111FS RN2110FS RN2111FS
Contextual Info: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more

Contextual Info: TO SH IB A RN1110,RN1111 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R N 1 1 in • « ■ V ■ ■ ■ g RN1111 ■ « ■ V ■ ■ ■ ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors

Contextual Info: T O SH IB A RN1110F,RN1111F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 111Í1F 'm m m m m g R M 1 1 1 1■■F m m m 'm m m m SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

RN2111FT

Abstract: RN1110FT RN1111FT RN2110FT XK 10 equivalent
Contextual Info: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT, RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin

Contextual Info: T O SH IB A RN1110,RN1111 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1110, RN1111 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Sim plify Circuit Design •