RN2310 Search Results

Contextual Info: SILICON PNP EPITAXIAL TYPE SWITCHING, INVERTER CIRCUIT, RN2310, RN2311 INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm .± 2 1 0.1 • With Built-in Bias Resistors 1.25Ì0.1 • Simplify Circuit Design -E3 • Reduce a Quantity of Parts and Manufacturing Process

RN1310

Abstract: RN2310 RN2311
Contextual Info: RN2310,RN2311 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2310,RN2311 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

Contextual Info: RN2310,RN2311 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2310,RN2311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA RN2310,RN2311 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2310, RN2311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplify circuit design

Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2310,RN2311 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1310

Abstract: RN1311 RN2310 RN2311
Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2310,RN2311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN2310,2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2.1 • With Built-In Bias Resistors ±0.1 1.2S±0.1 • Simplify Circuit Design o -fI -EE • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN1310, RN1311

RN1310

Abstract: RN1311 RN2310 RN2311
Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2310,RN2311 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1310

Abstract: RN1311 RN2310 RN2311
Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2310,RN2311 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2310,RN2311 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process

L 146 CB Equivalent

Contextual Info: R N 13 10 ,1311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 2.1 ± 0.1 • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN2310, RN2311

Contextual Info: RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2310,RN2311 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Toshiba xm

Contextual Info: TOSHIBA RN1310,RN1311 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1310, RN1311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

Contextual Info: T O SH IB A RN1310,RN1311 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1310, RN1311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

Contextual Info: RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ