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    RU55L18R

    Abstract: ruichips
    Text: RU55L18R P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -60V/-16A, RDS ON =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • ESD protected • Reliable and Rugged TO-220 • 100% avalanche tested


    Original     		PDF RU55L18R -60V/-16A, O-220 RU55L18R ruichips