S1510 Search Results
S1510 Price and Stock
onsemi NRTS15100PFST3GDIODE SCHOTTKY 100V 15A TO2773 |
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NRTS15100PFST3G | Digi-Reel | 4,235 | 1 |
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NRTS15100PFST3G | 5,000 |
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NRTS15100PFST3G | 19 Weeks | 5,000 |
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NRTS15100PFST3G | 7,186 |
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PanJit Group GS1510FL_R1_00001SOD-123FL, GENERAL |
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GS1510FL_R1_00001 | Cut Tape | 4,070 | 1 |
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onsemi NRVTS15100PFST3GDIODE SCHOTTKY 100V 15A TO2773 |
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NRVTS15100PFST3G | Digi-Reel | 2,955 | 1 |
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NRVTS15100PFST3G | 4,500 |
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NRVTS15100PFST3G | 1 |
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NRVTS15100PFST3G | 19 Weeks | 5,000 |
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NRVTS15100PFST3G | 20 Weeks | 5,000 |
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Vishay Semiconductors BYW76RAS15-10DIODE AVALANCHE 600V 3A |
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BYW76RAS15-10 | Bulk | 2,000 | 1 |
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Ohmite Mfg Co HS15-10R-JRES CHAS MNT 10 OHM 5% 15W |
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HS15-10R-J | Bulk | 645 | 1 |
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S1510 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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S-1.5-10 | Unknown | Cross Reference Datasheet | Scan | 38.48KB | 1 | |||
S1.5-1000 | Sussex Semiconductor | .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE | Original | 148.01KB | 7 | |||
S1.5-1000-200 | Sussex Semiconductor | .25 TO 16 AMP STANDARD RECOVERY RECTIFIER FLIP-DIE | Original | 148.01KB | 7 | |||
S-1.5-10FR | Unknown | Cross Reference Datasheet | Scan | 38.48KB | 1 |
S1510 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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J1 3009Contextual Info: 151.2MHz SAW Filter 2MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. S15103 Part Number: LB S15103 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation � Dual In-line Package |
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LBS15103 2002/95/EC) J1 3009 | |
Contextual Info: 151.1MHz SAW Filter 1.4MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. S15104 Part Number: LB S15104 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation � |
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LBS15104 2002/95/EC) | |
MMDB7000
Abstract: S1510 crystal 4-pin thru-hole
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S1310 S1510 dat08 MMDB7000 DS-162 MMDB7000 crystal 4-pin thru-hole | |
S131* crystal
Abstract: s1310 MGA010 S1510
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S1310/S1510 MGA010 S131* crystal s1310 MGA010 S1510 | |
RL-S1520SBRW
Abstract: S1520 RL-S1510GDBW RL-S1520OCAW RL-S1520RCBW
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RL-S1510GDBW RL-S1520SBRW RL-S1510YCBW RL-S1520RCBW RL-S1520OCAW RL-S1510 RL-S1520 IF-20mA RL-S1520SBRW S1520 RL-S1510GDBW RL-S1520OCAW RL-S1520RCBW | |
Crystal oscillator 12 MHz
Abstract: MGA010 S1510
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S1310/S1510 DIL-14 MGA010 Crystal oscillator 12 MHz MGA010 S1510 | |
FQS25050F
Abstract: FQ-S15100N FQ-WD010 S25100 FQ-S25100N FQ-S25100F FQ-WD002 FQ-WN002 FQ-S25050F W4S1-05B
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ron247 omron247 NL-2132 Q180-E1-02A FQS25050F FQ-S15100N FQ-WD010 S25100 FQ-S25100N FQ-S25100F FQ-WD002 FQ-WN002 FQ-S25050F W4S1-05B | |
S151Contextual Info: S151-084-S151-00 www.murata-ps.com DC/DC Converter FEATURES High output 15A OBSOLETE PRODUCT 3.3V ±5%, 5/12V ±10% Input Regulation ±0.4% line and load Industry standard pin configuration High efficiency to 91% Remote Sense, Trim and Enable |
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S151-084-S151-00 5/12V S151-03 S151-05 S151-12 S151-084-S151-00 S151 | |
IGT4E10
Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
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OCR Scan |
0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A | |
Contextual Info: SPICE Device Model SQD50P08-28 www.vishay.com Vishay Siliconix N-Channel 80 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SQD50P08-28 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SQM110P06-8m9L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 ° MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SQM110P06-8m9L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SIHA18N60E-E3Contextual Info: SiHA18N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.176 92 Qgs (nC) 10 Qgd (nC) 18 |
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SiHA18N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIHA18N60E-E3 | |
Contextual Info: DWG. NO. SD-35151-0410 - E - u=y ITEM _n_ \ Ljy ITTI o V i r I SIMILAR CAVITY N0. AB. . . 5.5 6.2 èw I mJLtd J XI □“ 17.6 12.0 NO. NOTES 1. MATERIAL : POLYESTER(PBT), UL94V-0 r " I PROJECT \ r - S 35151-0410 NATURAL COLOR 35151-0412 RED COLOR |
OCR Scan |
SD-35151-0410 UL94V-0 S1510U0 | |
OMRON EE-sx 412
Abstract: transistor D526 equivalent OMRON ee-sx 416 CS1W-CN118 cable OMRON sysmac c20 programming manual RELAY RM2 TR1 NJ-30 R88D-KN user manual error codes
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X302-E3-06 OMRON EE-sx 412 transistor D526 equivalent OMRON ee-sx 416 CS1W-CN118 cable OMRON sysmac c20 programming manual RELAY RM2 TR1 NJ-30 R88D-KN user manual error codes | |
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12v dc 120v ac converterContextual Info: S151 DC/DC Converter 3.3V input, 0.8 to 2.5V output, 15A 5V input, 1.0 to 3.3V output, 15A 12.0V input, 1.5 to 5.0V output, 15A Features ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ ✓ High output 15A 3.3V ±5%, 5/12V ±10% Input Regulation ±0.4% line and load Industry standard pin configuration |
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5/12V 084-S151-00 Feb26-2004 12v dc 120v ac converter | |
Contextual Info: SPICE Device Model SQ2308CES www.vishay.com Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SQ2308CES 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si7617DN www.vishay.com Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) d, g 0.0123 at VGS = -10 V -35 0.0222 at VGS = -4.5 V -35 VDS (V) -30 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg and UIS tested 20.5 nC |
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Si7617DN Si7617DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHB18N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.176 92 Qgs (nC) 10 Qgd (nC) 18 |
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SiHB18N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SKY65052-372LF
Abstract: S1509 VT47 GRM015 S1408 S1511 S1417 GRM01
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SKY65052-372LF: SKY65052-372LF 01088A S1509 VT47 GRM015 S1408 S1511 S1417 GRM01 | |
TS150R
Abstract: TS1510R TS151R TS152R TS154R TS156R
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OCR Scan |
TS150R TS1510R MIL-S-19500/228 DO-15 MIL-STD-202, TS1510R TS151R TS152R TS154R TS156R | |
marking s15 diode
Abstract: s15 diode
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IRFPE40 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 marking s15 diode s15 diode | |
siliconix 1037Contextual Info: SiHP18N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.176 92 Qgs (nC) 10 Qgd (nC) 18 |
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SiHP18N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 siliconix 1037 | |
Contextual Info: SPICE Device Model SQM120N04-1m7 www.vishay.com Vishay Siliconix N-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SQM120N04-1m7 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
R36W
Abstract: R2620 S-1010 S1730 VDE 0660 -T200 S-17 R2640 R3560 40.21 relay S1724
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OCR Scan |
S1010 S1210 S1020 R36W R2620 S-1010 S1730 VDE 0660 -T200 S-17 R2640 R3560 40.21 relay S1724 |