S20S30 Search Results

S20S30

Abstract: S20S60
Contextual Info: MOSPEC S20S30 thru S20S60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

Contextual Info: S20S30PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 45 Volts S20S45PT CURRENT 20 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction

S20S30GP

Abstract: S20S35GP S20S40GP S20S45GP
Contextual Info: S20S30GP CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 45 Volts S20S45GP CURRENT 20 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction

S20S30

Abstract: S20S45 S20S50 S20S60
Contextual Info: & MOSPEC S20S30 Thru S20S60 SWITCHMODE POWER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS D2 PAK SURFACE MOUNT POWER PACKAGE The D2 PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:

S20S30

Abstract: S20S45 S20S50 S20S60
Contextual Info: Bk MOSPEC S20S30 Thru S20S60 SWITCHMODE POWER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS D2 PAK SURFACE MOUNT POWER PACKAGE The D2 PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:

Contextual Info: MOSPEC S20S30 thru S20S60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

40Cr

Abstract: 45CR S20S30CR S20S60CR 50-CR
Contextual Info: MOSPEC 2 S20S30CR Thru S20S60CR Switchmode Power Rectifiers I2 PAK surface Mount Power Package SCHOTTKY BARRIER RECTIFIERS The I PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have

40-CR

Contextual Info: MOSPEC 2 S20S30CR Thru S20S60CR Switchmode Power Rectifiers I2 PAK surface Mount Power Package SCHOTTKY BARRIER RECTIFIERS The I PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have

S20S30

Abstract: S20S60
Contextual Info: MOSPEC S20S30 thru S20S60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

DG172AP

Abstract: Dg172bp DG172
Contextual Info: DG172 Monolithic 4-Channel PMOS Analog Switch 0 W Siliconix JO B incorporated FEATURES BENEFITS APPLICATIONS • TTL, C M O S Direct • Easy Interface • • R educes External In terface • Am plifiers Protection C om ponents • V o ltag e Limiting Diodes

Contextual Info: DC DC Part Num S20 - SERIES 20W HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltage * * * * * * * Outputs to 1000 Vdc High Power Density Single and Dual Outputs Ultra Wide Input Ranges 1000 Vdc Output Isolation Continuous Short Circuit Protection

L18P

Abstract: L07P025D15 L08P050D15 S22P006S05 L08P150D15 L10P025D15 hall current sensor 3A L18P040D15 Tamura L18P020D15 L07P015
Contextual Info: Hall Effect Current Sensors www.tamuracorp.com 3 to 25 Amp Applications –– Open Loop • Compact PCB Mount Design • Dual Integrated Primary • Withstanding Voltage of 2000 Vrms • 3A - 25A with a Bipolar ±15VDC Supply Voltage • Low Cost Specifications Measured at 25°C, RL-10KΩ Vcc=+15V

Contextual Info: American Power Design, Inc. "The best high voltage design solution" S20 SERIES 20 WATT HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltage * * * * * * * Outputs to 1000 Vdc High Power Density Single and Dual Outputs Ultra Wide Input Ranges

S22P025S05

Contextual Info: Hall Effect Current Sensors w w w. t a m u r a c o r p . c o m 50 to 300 Amp Applications –– Closed Loop • Panel Mount Design • Current Output type • Very High Linearity • +12V or +15V Supply Voltage • CE EN50178 pending Specifications Measured at 25˚C, RL±15KΩ, Vcc=+12V

Contextual Info: American Power Design, Inc. "The best high voltage design solution" S20 SERIES 20 WATT HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltage * * * * * * * Outputs to 1000 Vdc High Power Density Single and Dual Outputs Ultra Wide Input Ranges

D20S30

Abstract: SDP20S30 Q67040-S4374 Q67040-S4419 S20S30 SDB20S30 smd diode marking code UJ diode smd marking code 435 300V Schottky Diode smd
Contextual Info: SDP20S30 SDB20S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on Qc 23 IF 2x10 P-TO220-3.SMD the switching behavior

s10p40

Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge

s10p40

Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK

EN50178

Abstract: S21Z100D15 S22P025S05 S20S050A S20S100A S21Z150D15 S21Z200D15 S21Z300D15
Contextual Info: Hall Effect Current Sensors w w w. t a m u r a c o r p . c o m 100 to 300 Amp Applications –– Closed Loop • PCB Mount Design • Current Output type • Very High Linearity • ±15V Supply Voltage • CE EN50178 pending Specifications Measured at 25˚C, RL-10KΩ, VCC=+15V

D20S30

Abstract: Q67040-S4419 Q67040-S4374 S20S30 SDB20S30 SDP20S30
Contextual Info: SDP20S30 SDB20S30 Preliminary data Silicon Carbide Schottky Diode
Revolutionary semiconductor Product Summary material - Silicon Carbide
No reverse recovery Qc 23
No temperature influence on IF 2x10 P-TO220-3.SMD the switching behavior V 300 VRRM
Switching behavior benchmark

Contextual Info: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

irf 940

Abstract: smd diode marking code UJ
Contextual Info: SDB20S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23

EN50178

Abstract: EN-50178 L08P200D15 L08P150D15 S22P006S05 L10P010D15 L10P005D15 L01Z600S05 L08P100D15 L10P025D15
Contextual Info: Hall Effect Current Sensors w w w. t a m u r a c o r p . c o m 3 to 30 Amp Applications –– Open Loop • Compact PCB Mount Design • Voltage Output type • Withstanding Voltage of 2500 Vrms • Very High Linearity • ±15V Supply Voltage • CE EN50178 pending