S5038 Search Results

ECHO canceller IC

Abstract: audio echo cancellation ic Digital ECHO microphone mixing circuit MCS-51 MT9315 MT9315AE MT9315AP lz 24h k Echo Processor IC AAS14
Contextual Info: CMOS g M ITEL MT9315 Acoustic Echo Canceller Advance Information SEM ICON D U CTOR D S5038 Features ISSUE 3 February 1999 O rdering Inform ation • C ontains two echo cancellers: 1 12ms acoustic echo ca nce lle r + 16ms line echo canceller • W orks w ith low cost voice codec. ITU-T G .7 1 1

Contextual Info: CMOS MITEL Acoustic Echo Canceller Advance Information SEM ICON D U CTOR D S5038 Features • • • • • • • • • MT9315 Contains two echo cancellers: 112ms acoustic echo canceller + 16ms line echo canceller Works with low cost voice codec. ITU-T G.711

BROWN BOVERI

Abstract: R50320 S50310 R50310 R50330 R50340 R50360 S50320 S50330 S50340
Contextual Info: BBC •FMC B R O W N , B O V E R I & CIE AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers BROWN BOVERI G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 7 2 7 Postfach 200, D -6840 Lam pertheim Series 503 250 Amperes Average

Si2321DS

Contextual Info: SPICE Device Model Si2321DS Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3447BDV

Contextual Info: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3443DV

Abstract: 70-904
Contextual Info: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3442BDV

Contextual Info: SPICE Device Model Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

hypertac connector insertion tools

Contextual Info: HG Series HyperGrip - Push/Pull Plastic Circular Connectors General Specifications - HyperGrip Number of Contacts Contact Diameter Current Rating Amps Contact Resistance (milliohms) Contact Extraction Force per contact (oz.) Termination Styles Available

Si2306DS

Contextual Info: SPICE Device Model Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3445DV

Contextual Info: SPICE Device Model Si3445DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI2308DS

Abstract: Si2308DS SPICE Device Model 70902
Contextual Info: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD08P06-155L

Contextual Info: SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.155 @ VGS = −10 V −8.4 0.280 @ VGS = −4.5 V −7.4 Qg (Typ) 12 5 12.5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature

Si3442BDV

Contextual Info: SPICE Device Model Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3455DV

Contextual Info: SPICE Device Model Si3455DV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3455ADV

Contextual Info: SPICE Device Model Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

72555

Abstract: Si3440DV
Contextual Info: SPICE Device Model Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3443BDV

Abstract: 7276 72766 SI3443
Contextual Info: SPICE Device Model Si3443BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3459DV

Contextual Info: SPICE Device Model Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2328DS

Contextual Info: SPICE Device Model Si2328DS Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

50386

Abstract: SI4900DY
Contextual Info: Si4900DY New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 @ VGS = 10 V 5.3 0.072 @ VGS = 4.5 V 4.7 VDS (V) 60 D TrenchFETr Power MOSFET D RoHS Compliant Qg (Typ) Product Is Completely Pb-free

50386

Contextual Info: Si4900DY New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 @ VGS = 10 V 5.3 0.072 @ VGS = 4.5 V 4.7 VDS (V) 60 D TrenchFETr Power MOSFET D RoHS Compliant Qg (Typ) Product Is Completely Pb-free

Si2333DS

Contextual Info: SPICE Device Model Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2319DS

Contextual Info: SPICE Device Model Si2319DS Vishay Siliconix P-Channel 40-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si3441BDV SPICE Device Model

Abstract: Si3441BDV
Contextual Info: SPICE Device Model Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range