S8834 Search Results

S8834

Contextual Info: TOSHIBA MICROWAVE POWER Ga As FET MICROWAVE SEMICONDUCTOR S8834 TECHNICAL DATA FEATURES: • SUITABLE FOR Ç-BAND AM PLIFIER M ED IU M POWER IdB = 21 dBm at f = 8 G Hz ION IMPLANTATION HJGH GAIN MdB = 9 dB at f = 8 G Hz RF PERFORMANCE SPECIFICATIONS Ta = 25° C

JS8834-AS

Contextual Info: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 S8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8834 Power GaAs FETs Packaged Features • M edium pow er - P idB = 21 dBm at f = 8 GHz • High gain - G idB = 9 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8834

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8834 Power GaAs FETs Packaged Features • Medium power - P1dB = 21 dBm at f = 8 GHz • High gain - G1dB = 9 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8834 Power GaAs FETs Packaged Features • Medium power - P^B = 21 dBm at f = 8 GHz • High gain - G 1dB = 9 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

PAL Decoder 16L8

Abstract: 74AS8838 4 bit barrel shifter using mux Decoder 16L8 3z fuse barrel shifter P16L8 pal 002 sn74as8838 PAL 16L8
Contextual Info: SN 74A S8838 32-Bit Barrel Shifter • High-speed “ flash” shift operations • Shifts up to 32 positions in less than 25 ns • Performs logical, circular and arithmetic shifts • 3-state outputs allow 32-bit and 16-bit bus interface • 24 m A bus drivers

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

TGI8596-50

Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Contextual Info: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4

register file

Abstract: B20B Parity Checkers d2936
Contextual Info: S8834, S8834 40 BIT REGISTER FILE PRODUCT PREVIEW D 2936, N O V EM B ER I9 8 5 - R E V IS E D • Advanced Schottky IMPACT-X Process • Three-Operand, 64-Word by 40-Bit Register File M A R C H 1986 logic sym b ol t 109-001 [019-010 IO29D20)

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

RFM70U12D

Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

74AS888

Abstract: ic vertical la 78141 IC LA 78141 schematic D2822 equivalent sn74as888 74ALS96 74AS SERIES 74LS222 KJE y3 transistor TMS9900
Contextual Info: Data Book 1986 Bipolar and CMOS LSI/VLSI * 5» Texas In s t r u m ents General Information LSI Devices Application Reports Mechanical Data LSI Logic Data Book Te x a s In s t r u m e n t s IM POR TAN T NOTICE Texas Instrum e nts Tl reserves the righ t to make changes in the

TGI7785-120L

Abstract: TA4029TU MT3S11CT TA4029CTC MT4S300T MT4S300U TA4032FT TGI8596-50 TMD7185-2 TGI0910-50
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波ダイオード 小信号 MMIC 高周波セルパック マイクロ波半導体

register file

Abstract: d2936 Parity Checkers 036 84, 036 85, 036 86 rondorex w21 PS1J TRANSISTOR Y1D SN74AS883 rab5 036 84, rondorex w21 F119
Contextual Info: SN54AS8B34, S8834 40-BIT REGISTER FILE PRODUCT PREVIEW D 2 9 3 6 , N O V E M B E R 1 9 8 5 -R E V IS E D MARCH 1986 logic symbol t • A d v an ce d S c h o ttk y IM PA C T-X Process • T h re e -O p e ra n d . 6 4 -W o r d by 4 0 -B it R egister