SB8150 Search Results

Contextual Info: SB8150 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – – 150 Volts 8.0 Amperes DO-201AD • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability •The plastic material carries UL recognition 94V-0

Contextual Info: DATA SHEET SB820F~SB8150F ISOLATION SCHOTTKY BARRIER RECTIFIERS 8 Amperes CURRENT VOLTAGE 20 to 150 Volts ITO-220AC Unit : inch mm FEATURES • Exceeds environmental standards of MILS-19500/228 .189(4.8) .165(4.2) .272(6.9) .248(6.3) .406(10.3) .381(9.7)

Contextual Info: DATA SHEET SB820CT~SB8150CT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 150 Volts CURRENT 8 Amperes TO-220AB Unit : inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.

Contextual Info: SB8150FCT – SB8200FCT 8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: SB8150FCT – SB8200FCT WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip B Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

Contextual Info: SB8150DC – SB8200DC WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency

Contextual Info: SB8150D – SB8200D 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency

SB8150D

Abstract: SB8150D-T3
Contextual Info: SB8150D WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip C ! Guard Ring Die Construction for A Transient Protection ! Low Forward Voltage Drop ! Low Power Loss, High Efficiency B ! High Surge Current Capability

GE 337

Abstract: SB8150D SB8150D-T3
Contextual Info: SB8150D – SB8200D WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

SB8150DC

Abstract: SB8150DC-T3
Contextual Info: SB8150DC WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip C ! Guard Ring Die Construction for A Transient Protection ! Low Forward Voltage Drop ! Low Power Loss, High Efficiency B

SB8150F

Contextual Info: SB8150F – SB8200F WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip B Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

Contextual Info: SB8150F – SB8200F WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip B Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

Contextual Info: SB8150D – SB8200D WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: SB8150 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – 150 Volts – 8.0 Amperes DO-201AD • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability •The plastic material carries UL recognition 94V-0

Contextual Info: SB8150F – SB8200F 8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: SB8150 – SB8200 8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: SB8150D – SB8200D WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip C Guard Ring Die Construction for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: SB8150 – SB8200 WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip B Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

SB8150CT

Contextual Info: SB8150CT – SB8200CT WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip B Guard Ring for Transient Protection Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability

ITO-220

Abstract: SB8150FCT
Contextual Info: SB8150FCT WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability

SB8150F

Contextual Info: SB8150F WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability

Contextual Info: DATA SHEET SB820DC~SB8150DC D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 150 Volts 2 8 Amperes CURRENT TO - 2 6 3 / D PA K Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing

SB8150

Contextual Info: SB8150 WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability

SB8150CT

Contextual Info: SB8150CT WTE POWER SEMICONDUCTORS Pb 8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! ! ! ! ! Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability