SD1680 Search Results

Contextual Info: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY

SD1680

Abstract: DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE
Contextual Info: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

Contextual Info: f Z 7 S G S -T H O M S O N ^ 7 # . K M SD1680 « « ® « ! RF & M I C R O W A V E T R A N S I S T O R S 8 0 0 /9 0 0 M H z A P P L I C A T I O N S • . ■ . ■ ■ . ■ ■ . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR

SD1680

Abstract: M175 push pull class AB RF linear DIODE aay 49 j 4005
Contextual Info: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST

M142

Abstract: M118 m169 SD1400-03 M175 SD1426 SD1680 M208 SD1400-02 SD1414
Contextual Info: SILICON POWER TRANSISTORS Specifically designed for standard mobile radio as well as cellular telephone base station applications, SGS-THOMSON 800/900 MHz transistors utilize a proven refractory-gold metallization system to ensure excellent long-term reliability and device ruggednejss.

M142

Abstract: SD1398 SD1414 SD1423 SD1424 SD1425 SD1650 SD4017 SD4600 SD4701
Contextual Info: SILICON POWER TRANSISTORS 800/900 MHz TRANSISTORS Specifically designed for standard mobile radio as well as cellular telephone base station applications, SGS-THOMSON 800/900 MHz transistors utilize a proven refractory-gold metallization system to ensure excellent long-term reliability and

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: S filili SILICON POWER TRANSISTORS 800/900 MHz TRANSISTORS Specifically designed for standard mobile radio as well as cellular telephone base station applications, SG S-THO M SO N 800/900 MHz transistors utilize a proven refractory-g old metallization system to ensure excellent long-term reliability and

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

M231

Abstract: SD166 "class AB Linear"
Contextual Info: SILICON POWER TRANSISTORS 800/900 MHz TRANSISTORS Specifically designed for standard mobile radio as well as cellular telephone base station applications, SGS-THOMSON 800/900 MHz transistors utilize a proven refractory-gold metallization system to ensure excellent long-term reliability and

SD1620D

Abstract: SD1630D SD1640D SD1650D sd1610
Contextual Info: SD1620D THRU SD16100D DC COMPONENTS CO., LTD. RECTIFIER SPECIALISTS R TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts CURRENT - 16 Amperes FEATURES * * * * * * Metal to silicon rectifier majority carrier conduction

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition