SDM3200 Search Results

Contextual Info: SDM3200-011 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.1G Frequency Min. (Hz)2.0G Frequency Max. (Hz)8.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: SDM3200-301 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.1G Frequency Min. (Hz)2.0G Frequency Max. (Hz)8.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: SDM3200-102 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.1G Frequency Min. (Hz)2.0G Frequency Max. (Hz)8.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

SDM3402

Abstract: SDM3200 SDM3201 SDM3202 SDM3203 SDM3204 SDM3205 SDM3400 SDM3401 SDM3403
Contextual Info: Device Type VCEO SDM3200 SDM3201 SDM3202 SDM3203 SDM3204 SDM3205 SDM3400 SDM3401 SDM3402 SDM3403 SDM3404 SDM3405 40 60 80 40 60 80 40 60 80 40 60 80 V hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 1000 5.0 3.0 5.0 1000 5.0 3.0 5.0 1000 5.0 3.0 5.0 1000

Contextual Info: SDM3200 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20– Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

Contextual Info: SDM3200-901 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.1G Frequency Min. (Hz)2.0G Frequency Max. (Hz)8.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: SDM3200-144 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS-C Test Freq3.1G Frequency Min. (Hz)2.0G Frequency Max. (Hz)8.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

sdm3400

Contextual Info: ^falitran £ \L© MEDIUM VOLTAGE, FAST SWITCHING, HIGH GAIN Devices, Inc. PNP EPITAXIAL PLANAR POWER DARLINGTON* * (FORMERLY 30 CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also availab le)

SDM3010

Abstract: SDM3002 SDM4004 SDM3402 sdm3400 SDM4003 SDM4006 SDM3000
Contextual Info: *Jdlitron ATTÄIL D A R L IN G T O N P O W E R T R A N S IS T O R S Devices. Inc. CASE TYPE CHIP TYPE 50.00 50.00 50.00 SO.OO 50.00 TO-3* TO-3* TO-3* TO-3* TO-3* 103/230 103/230 103/230 103/230 103/230 40.0 40.0 40.0 40.0 40.0 50.00 35.00 35.00

gain chip

Contextual Info: -Æ tttron « © y © ? ©M & BM M EDIUM VOLTAGE, FAST SW ITCHIN G , HIGH GAIN Devices. Inc. CHIP N UM BER PNP EPITAXIAL PLANAR POWER DARLINGTON* FORMERLY 30 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or ''Chrome Nickel Silver" also available)

gain chip

Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC 95D 02 88 3 3 J-S < "s OLITRÓN DEVICES INC ÌM ii Devices, Inc. M EDIUM VOLTAGE, FAST SWITCHING, HIGH GAIN CHIP NUMBER PNP EPITAXIAL PLANAR POWER DARLINGTO N* FORMERLY 30 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum

SDM3000

Abstract: sdm6003 SDM4006 SDM5010
Contextual Info: 8 3 6 8 6 0 2 SOL IT R ON D E V I C E S INC 95D 0 2780 — 7""' 3 3 - DE | fi3tflbDE DD0S7flD T SOLITRON DEVICES INC § D , Devices Inc. DARLIIMGTOIM POVA/ER T R A N S IS T O R S MffliF5 MIm fT MIN MHz PT MAX (W) CASE TYPE CHIP TYPE VCEO (V) hpE MIN/MAX