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    35N06

    Abstract: C293 SEFH35H06 G7E Diode SEFH35N05
    Text: S G S-THÔMSÔN Q?E D 73C 1 7 5 6 8 7c15ciE37 OOlfl071 □ D T v^ -U » SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 W ' i l H N -G H A N N El POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF OOlfl071 SEFH35N05 SEFH35H06 SEFM35N05 SEFH35N06 0V/60V 35N06 SGSP491 C-293 C293 G7E Diode

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120