SEMIX202GB066HDS Search Results
SEMIX202GB066HDS Price and Stock
SEMIKRON SEMIX202GB066HDSIgbt Module, Dual, 600V, 275A; Continuous Collector Current:275A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:45W; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX202GB066HDS |
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SEMIX202GB066HDS | Bulk | 6 |
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SEMIKRON SEMIX202GB066HDS 27891110Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX202GB066HDS 27891110 | 1 |
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SEMIX202GB066HDS Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SEMIX202GB066HDS |
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Trench IGBT Modules | Original | 1.03MB | 4 |
SEMIX202GB066HDS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C |
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SEMiX202GB066HDs | |
Contextual Info: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX202GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V |
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SEMiX202GB066HDs SEMiX202GB066HDs E63532 | |
Contextual Info: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C |
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SEMiX202GB066HDs E63532 | |
Contextual Info: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 274 A Tc = 80°C 207 A 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 291 A Tc = 80°C 214 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules |
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SEMiX202GB066HDs | |
semikron ms 8/4Contextual Info: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C |
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SEMiX202GB066HDs E63532 semikron ms 8/4 | |
Positive Temperature CoefficientContextual Info: SEMiX202GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 274 A Tc = 80 °C 207 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C |
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SEMiX202GB066HDs E63532 B100/125 R100exp B100/125 1/T-1/T100) Positive Temperature Coefficient | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |