SEMIX251GD126HDS Search Results
SEMIX251GD126HDS Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
SEMIX251GD126HDS |
![]() |
Trench IGBT Modules | Original | 1.1MB | 4 |
SEMIX251GD126HDS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules SEMiX251GD126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V |
Original |
SEMiX251GD126HDs E63532 | |
Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C |
Original |
SEMiX251GD126HDs E63532 | |
200 A WELDING INVERTER DESIGN BY IGBTContextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C |
Original |
SEMiX251GD126HDs E63532 B100/125 R100exp B100/125 1/T-1/T100) 200 A WELDING INVERTER DESIGN BY IGBT | |
Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C |
Original |
SEMiX251GD126HDs E63532 | |
Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 242 A Tc = 80 °C 170 A 150 A ICnom ICRM SEMiX 13 tpsc Trench IGBT Modules ICRM = 2xICnom 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C |
Original |
SEMiX251GD126HDs E63532 | |
Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 242 A Tc = 80°C 170 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 207 A Tc = 80°C 143 A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules |
Original |
SEMiX251GD126HDs | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
|
Original |
SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |