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SEMIX302GAR12E4S Price and Stock

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SEMIKRON


SEMIKRON SEMIX302GAR12E4S Igbt Module, Single, 1.2Kv, 463A; Continuous Collector Current:463A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX302GAR12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX302GAR12E4S	Bulk			6	1 - 10 $106.97 100 $97.81 1000 $97.81 10000 $97.81	Buy Now
RS	SEMIX302GAR12E4S	Bulk			1	1 $417.26 10 $383.88 100 $383.88 1000 $383.88 10000 $383.88	Get Quote
Richardson RFPD	SEMIX302GAR12E4S				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SEMIX302GAR12E4S 27890222 Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX302GAR12E4S 27890222				1	1 $328.29 10 $259.55 100 $233.91 1000 $233.91 10000 $233.91	Get Quote

SEMIX302GAR12E4S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX302GAR12E4s E63532	PDF
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C	Original	SEMiX302GAR12E4s E63532	PDF
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX302GAR12E4s SEMiX302GAR12E4s	PDF
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX302GAR12E4s E63532	PDF
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX302GAR12E4s E63532 dEMiX302GAR12E4s	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF