SEMIX302GB12VS Search Results
SEMIX302GB12VS Price and Stock
SEMIKRON SEMIX302GB12VSIgbt Module, Dual, 1.2Kv, 448A; Continuous Collector Current:448A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX302GB12VS |
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SEMIKRON SEMIX302GB12VS 27890121Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A |
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SEMIX302GB12VS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CS 5800Contextual Info: SEMiX302GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 2s VGES tpsc Tj ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V 900 A -20 . 20 V 10 |
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SEMiX302GB12Vs SEMiX302GB12Vs E63532 CS 5800 | |
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Contextual Info: SEMiX302GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 2s VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 900 A -20 . 20 |
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SEMiX302GB12Vs SEMiX302GB12Vs E63532 | |
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Contextual Info: SEMiX302GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 448 A Tc = 80 °C 342 A 300 A ICnom ICRM SEMiX 2s ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 356 A Tc = 80 °C |
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SEMiX302GB12Vs E63532 |