SEMIX302GB176HDS Search Results
SEMIX302GB176HDS Price and Stock
SEMIKRON SEMIX302GB176HDSIgbt Module, Dual, 1.7Kv, 308A; Continuous Collector Current:308A; Collector Emitter Saturation Voltage:2V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.7Kv Rohs Compliant: Yes |Semikron SEMIX302GB176HDS |
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SEMIX302GB176HDS | Bulk | 6 |
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SEMIKRON SEMIX302GB176HDS 27890470Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A |
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SEMIX302GB176HDS 27890470 | 1 |
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SEMIX302GB176HDS Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SEMIX302GB176HDS |
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Trench IGBT Modules | Original | 515.8KB | 2 |
SEMIX302GB176HDS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 308 A Tc = 80 °C 219 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -55 . 150 °C |
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SEMiX302GB176HDs E63532 | |
Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 308 A Tc = 80 °C 219 A 200 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX302GB176HDs E63532 | |
Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 308 A Tc = 80°C 219 A 400 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 389 A Tc = 80°C 262 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules |
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SEMiX302GB176HDs | |
Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 308 A Tc = 80 °C 219 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX302GB176HDs | |
Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 308 A Tc = 80 °C 219 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 400 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
Original |
SEMiX302GB176HDs | |
Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 308 A Tc = 80 °C 219 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V |
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SEMiX302GB176HDs SEMiX302GB176HDs E63532 Typic11: | |
Contextual Info: SEMiX302GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 308 A Tc = 80 °C 219 A 200 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V |
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SEMiX302GB176HDs SEMiX302GB176HDs E63532 | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |