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    SEMIX703GB126HDS Search Results

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    SEMIX703GB126HDS Price and Stock

    SEMIKRON SEMIX703GB126HDS

    Igbt Module, 1.2Kv, 650A, Semix 3S; Continuous Collector Current:642A; Collector Emitter Saturation Voltage:2.1V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2V Rohs Compliant: Yes |Semikron SEMIX703GB126HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX703GB126HDS Bulk 6
    • 1 -
    • 10 $284.66
    • 100 $268.28
    • 1000 $268.28
    • 10000 $268.28
    Buy Now

    SEMIKRON SEMIX703GB126HDS 27890700

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX703GB126HDS 27890700 1
    • 1 $878.17
    • 10 $693.51
    • 100 $623.75
    • 1000 $623.75
    • 10000 $623.75
    Get Quote

    SEMIX703GB126HDS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    SEMiX703GB126HDS
    Semikron Trench IGBT Modules Original PDF 834.73KB 2
    SEMIX703GB126HDS
    Semikron Trench IGBT Modules Original PDF 1.1MB 4

    SEMIX703GB126HDS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original
    SEMiX703GB126HDs SEMiX703GB126HDs E63532 PDF

    Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original
    SEMiX703GB126HDs E63532 PDF

    Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C


    Original
    SEMiX703GB126HDs E63532 PDF

    Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original
    SEMiX703GB126HDs E63532 PDF

    Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original
    SEMiX703GB126HDs E63532 PDF

    Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original
    SEMiX703GB126HDs B100/125 R100exp B100/125 1/T-1/T100) PDF

    Diode c 642

    Abstract: semix703gb126hd SEMiX703GB126
    Contextual Info: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original
    SEMiX703GB126HDs Diode c 642 semix703gb126hd SEMiX703GB126 PDF

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original
    AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original
    SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF