SGA9089Z Search Results

Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

Transistor TL 31 AC

Abstract: j142
Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

SiGe POWER TRANSISTOR

Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

Contextual Info: SGA9089Z S G 9 Hi g HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHz to 4.0GHz. The SGA9089Z is optimized for 3V operation. The

SGA6489Z

Abstract: IC 7489 JESD22-B102-C SGA6389Z SGA-5589Z SGA-7489 SGA-6489 SGA-9289Z SGA9189Z SGC-6489
Contextual Info: Reliability Report SGA/SGC Series in SOT-89 Package SnPb Plated SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA-9089 SGA-9189 SGA-9289 Matte Sn, RoHS Compliant SGA-5289Z SGA-5389Z SGA-5489Z SGA-5589Z SGA-6289Z SGA-6389Z

transistor tl 187

Abstract: transistor RF S-parameters SIRENZA MARKING TRANSISTOR tl-31
Contextual Info: Preliminary SGA-9089Z Product Description Sirenza Microdevices’ SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The

VCO-102

Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high

transistor tl 187

Abstract: SGA-9089 SIRENZA MARKING SiGe POWER TRANSISTOR transistor RF S-parameters bipolar transistor ghz s-parameter RF TRANSISTOR 2.5 GHZ s parameter transistor 2440 130C SGA-9089Z
Contextual Info: Preliminary SGA-9089Z Product Description Sirenza Microdevices’ SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The device

Contextual Info: Advanced SGA-9089Z Product Description Sirenza Microdevices’ SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 4.0 GHz. The SGA-9089Z is optimized for 3.0V operation. The device

MCH185C122KK

Abstract: SGA-9089Z AN080 SGA-9089 MCH185A390JK MCH185A4R7CK ML200C 101216 LL1608-FS4N7S MCH185A5R6CK
Contextual Info: Design Application Note - AN-080 SGA-9089Z Amplifier Application Circuits Design Considerations and Trade-offs -Biasing Techniques Abstract Sirenza Microdevices’ SGA-9089Z is a high performance SiGe amplifier designed for operation from 50 MHz to 3.0 GHz. This application note illustrates application circuits

SGC-6489

Abstract: SGA9189Z RF transistor SOT-89 A102 TRANSISTOR IC 7489 SGA6489Z IC 7489 DATASHEET JESD22-A104 TEST CONDITION K sga6389z SGA-9089
Contextual Info: Reliability Report SGA/SGC Series in SOT-89 Package SnPb Plated SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA-9089 SGA-9189 SGA-9289 Matte Sn, RoHS Compliant SGA-5289Z SGA-5389Z SGA-5489Z SGA-5589Z SGA-6289Z SGA-6389Z

SGA-9089Z

Abstract: 105051
Contextual Info: SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor SGA-9089Z Preliminary HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

SGA-9089Z

Abstract: InP HBT transistor low noise
Contextual Info: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

RF5632

Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product