SGTN50A36FD Search Results
SGTN50A36FD Datasheets Context Search
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Contextual Info: SGTN50A36FD Insulated Gate Bipolar Transistor, IGBT 360V, 50A High Speed Punch Through IGBT Features • Low gate charge Punch Through Technology Low saturation voltage: VCE sat = 1.6V (@ IC = 50A, TC = 25C) RoHS compliant product Applications |
Original |
SGTN50A36FD O-220F-3L N50A36 SDB20D45 O-220F 28-NOV-13 |