SHD2263 Search Results

shd2263

Contextual Info: SENSITRON SEMICONDUCTOR SHD226403 SHD226403R TECHNICAL DATA DATA SHEET 171, REV. B Formerly Part Number SHD2263 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on

SHDC226309

Contextual Info: SENSITRON SEMICONDUCTOR SHD226309 TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • 100 Volt, 0.31 Ohm, -9.3 A MOSFET • • • • Fast Switching Low RDS on Equivalent to IRFY9130 Series Add a “C” to the part number for ceramic seals, SHDC226309

shd226302

Abstract: IRFY130M
Contextual Info: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .19 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY130M

Contextual Info: SENSITRON SEMICONDUCTOR SHD226314 TECHNICAL DATA DATA SHEET 816, REV. - HERMETIC POWER MOSFET N-CHANNEL, LOGIC LEVEL œ œ œ œ 60 VOLT, 0.05 OHM, 30A MOSFET Fast Switching Low RDS on Logic Level Gate Driver MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

717 MOSFET

Contextual Info: SENSITRON SEMICONDUCTOR SHD226305 SHD226305B TECHNICAL DATA DATA SHEET 336, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 1.6 Ohm MOSFET œ Isolated and Hermetically Sealed œ Equivalent to IRFY430M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

n channel mosfet to-257

Contextual Info: SENSITRON SEMICONDUCTOR SHD226303 TECHNICAL DATA DATA SHEET 622, REV. - HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRFY230M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

SHD226403R

Abstract: IRFY240 SHD2263 SHD226403 10mhz mosfet
Contextual Info: SHD226403 SHD226403R SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 171, REV. B Formerly Part Number SHD2263 HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 200 Volt, 0.21 Ohm, 14A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on

IRFY430M

Abstract: SHD226305 SHD226305B 717 MOSFET
Contextual Info: SENSITRON SEMICONDUCTOR SHD226305 SHD226305B TECHNICAL DATA DATA SHEET 336, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 1.6 Ohm MOSFET œ Isolated and Hermetically Sealed œ Equivalent to IRFY430M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

IRFY230M

Abstract: SHD226303
Contextual Info: SENSITRON SEMICONDUCTOR SHD226303 TECHNICAL DATA DATA SHEET 622, REV. - HERMETIC POWER MOSFET N-CHANNEL œ œ œ œ 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS on Equivalent to IRFY230M MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

SHDC226309

Abstract: IRFY9130 SHD226309
Contextual Info: SENSITRON SEMICONDUCTOR SHD226309 TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: • 100 Volt, 0.31 Ohm, -9.3 A MOSFET • • • • Fast Switching Low RDS on Equivalent to IRFY9130 Series Add a “C” to the part number for ceramic seals, SHDC226309

Contextual Info: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, .19 Ohm, 11A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to IRFY130M

IRFY130M

Abstract: SHD226302
Contextual Info: SENSITRON SEMICONDUCTOR SHD226302 TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, .19 Ohm, 11A MOSFET • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Equivalent to IRFY130M

Contextual Info: SENSITRON SEMICONDUCTOR SHD226314 TECHNICAL DATA DATA SHEET 816, REV. - HERMETIC POWER MOSFET N-CHANNEL, LOGIC LEVEL œ œ œ œ 60 VOLT, 0.05 OHM, 30A MOSFET Fast Switching Low RDS on Logic Level Gate Driver MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD226403 SHD226403R TECHNICAL DATA DATA SHEET 171, REV. B Formerly Part Number SHD2263 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on

jc 817

Abstract: *26313
Contextual Info: SENSITRON SEMICONDUCTOR SHD226313 TECHNICAL DATA DATA SHEET 817, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -60 Volt, 0.4 Ohm, -18 A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

SHD5183

Abstract: SHD5183A SHD5183B SHD5193 SHD5303 SHD5181 SHD5181A SHD5181B SHD5301
Contextual Info: 1995 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR INDEX BY PART NUMBER PART NUMBER_PAGE PART NUMBER 1N3611.7 1N3612. 7 1N3613. 7 1N 3614. 7

SHD2254

Abstract: shD2251
Contextual Info: SENSITRON SEMICONDUCTOR 1995 SHORTFORM CATALOG N-CHANNEL HERMETIC POWER MOSFETS TO-254, TO-257 TYPE NUMBER BVd SS DRAIN TO SOURCE BREAKDOWN VOLTAGE (VOLTS) •d CONTINUOUS DRAIN CURRENT (AMPS) Pd MAXIMUM POWER DISSIPATION (WATTS) h d s (0N) STATIC DRAIN TO

71 DT4

Abstract: SHD2251 IRFY044 IRFY140 IRFY240 IRFY340 IRFY440 SHD2261 SHD2262 SHD2263
Contextual Info: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE ~ ~ CONTINUOUS DRAIN CURRENT MAXIMUM POWER DISSIPATION 'd PD 60 100 200 400 500 800 900 1000 100 100 100 200

SL1515HE

Abstract: 1N8623 SD090SB45 SHD5181 sh086 SHD5193 SHD5183B SHD5303 SHD5183A SHD5183
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision Index bv Part Number Part Number 1N3611 1N3612 1N3613 1N3614 1N3957 1N4245 1N4246 1N4247 1N4248 1N4249 1N4942 1N4944 1N4946 1N4947 1N4948 1N5186 1N5187 1N5188 1N5190 1N5415 1N5415US 1N5416 1N5416US

*2393n

Abstract: D2199 IRF9140 2184b d2186 2188a d2188
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC POWER MOSFETs N -C H A N N E L . T O -2 5 4 . T O -2 5 7 TYPE NUM BER DRAIN TO SO URCE BREAKDO W N VOLTAGE CO NTINUO US DRAIN CURRENT M AXIM UM POWER DISSIPATION •d PD V (BR)DSS STATIC