SIGC81T120R2C Search Results

SIGC81T120R2C Price and Stock

Filter by Manufacturer


Infineon Technologies AG SIGC81T120R2CSX1SA4 IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: SIGC81T120R2CSX1SA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIGC81T120R2CSX1SA4	Waffle Pack			1,503	1 - 10 - 100 - 1000 - 10000 $7.73636	Buy Now
Infineon Technologies AG SIGC81T120R2CX1SA2 IGBT CHIPS (Alt: SP000012063)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SIGC81T120R2CX1SA2			53 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIGC81T120R2C Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIGC81T120R2C		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC81T120R2C		Infineon Technologies	SIGC81T120R2C, 1200V, 50A		Original	PDF
SIGC81T120R2CL		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC81T120R2CL		Infineon Technologies	SIGC81T120R2CL, 1200V, 50A		Original	PDF
SIGC81T120R2CS		Infineon Technologies	IGBT Chip in NPT-Technology		Original	PDF
SIGC81T120R2CS		Infineon Technologies	SIGC81T120R2CS, 1200V, 50A		Original	PDF

SIGC81T120R2C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ECONOPACK 2K Abstract: SIGC81T120R2C BSM50GD120DN2 Text: Preliminary SIGC81T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type SIGC81T120R2C VCE ICn 1200V 50A This chip is used for:	Original	PDF	SIGC81T120R2C 50GD120DN2 Q67041A4701-A003 7161-M, ECONOPACK 2K SIGC81T120R2C BSM50GD120DN2
ECONOPACK 2K Abstract: a4701 bsm 50gd120dn2 50GD120DN2 ECONOPACK SIGC81T120R2C Text: SIGC81T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type SIGC81T120R2C VCE ICn 1200V 50A This chip is used for:	Original	PDF	SIGC81T120R2C 50GD120DN2 Q67041A4701-A003 7161-M, ECONOPACK 2K a4701 bsm 50gd120dn2 50GD120DN2 ECONOPACK SIGC81T120R2C
BSM50GD120DLC Abstract: SIGC81T120R2CL Text: SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CL 1200V	Original	PDF	SIGC81T120R2CL SIGC81T120R2CL BSM50GD120DLC Q67041A4700-A001 7161-P, BSM50GD120DLC
Untitled Abstract: No abstract text available Text: SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V	Original	PDF	SIGC81T120R2CS SIGC81T120R2CS Q67050A4050-A001 7161-T,
SIGC81T120R2CL Abstract: BSM50GD120DLC Text: Preliminary SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type SIGC81T120R2CL	Original	PDF	SIGC81T120R2CL BSM50GD120DLC Q67041sawn A4700-A001 7161-P, SIGC81T120R2CL BSM50GD120DLC
SIGC81T120R2CS Abstract: infineon igbt die 1200V A4050 Text: Preliminary SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V	Original	PDF	SIGC81T120R2CS SIGC81T120R2CS Q67050sawn A4050-A001 7161-T, infineon igbt die 1200V A4050
Untitled Abstract: No abstract text available Text: Preliminary SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V	Original	PDF	SIGC81T120R2CS SIGC81T120R2CS Q67050A4050-A001 7161-T,
Untitled Abstract: No abstract text available Text: SIGC81T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type SIGC81T120R2C VCE ICn 1200V 50A This chip is used for:	Original	PDF	SIGC81T120R2C 50GD120DN2 Q67041A4701-A003 7161-M,
Untitled Abstract: No abstract text available Text: SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V	Original	PDF	SIGC81T120R2CS Q67050A4050-A001 SIGC81T120R2CS 7161-T,
NF 022 Abstract: SIGC81T120R2CS infineon igbt die 1200V Text: Preliminary SIGC81T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CS 1200V	Original	PDF	SIGC81T120R2CS SIGC81T120R2CS Q67050A4050-A001 7161-T, NF 022 infineon igbt die 1200V
50GD120 Abstract: No abstract text available Text: SIGC81T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling  integrated gate resistor This chip is used for:  power module BSM 50GD120DN2 C Applications:	Original	PDF	SIGC81T120R2C 50GD120DN2 L7161MM, 50GD120
ECONOPACK 2K Abstract: BSM50GD120DN2 a4701 50GD120DN2 SIGC81T120R2C BSM 50GD120DN2 Text: Preliminary SIGC81T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type SIGC81T120R2C VCE ICn 1200V 50A This chip is used for:	Original	PDF	SIGC81T120R2C 50GD120DN2 Q67041sawn A4701-A003 7161-M, ECONOPACK 2K BSM50GD120DN2 a4701 50GD120DN2 SIGC81T120R2C BSM 50GD120DN2
BSM50GD120DLC Abstract: SIGC81T120R2CL Text: Preliminary SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC81T120R2CL 1200V	Original	PDF	SIGC81T120R2CL SIGC81T120R2CL BSM50GD120DLC Q67041A4700-A001 7161-P, BSM50GD120DLC
Untitled Abstract: No abstract text available Text: SIGC81T120R2C IGBT Chip in NPT-technology Features: • 1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling  integrated gate resistor This chip is used for:  power module BSM 50GD120DN2 C Applications:	Original	PDF	SIGC81T120R2C 50GD120DN2 L7161MM,